Atomic layer deposition (ALD) relies on alternated, self-limiting reactions between gaseous
reactants and an exposed solid surface to deposit highly conformal coatings with a thickness …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Plasma-assisted atomic layer deposition (ALD) is an energy-enhanced method for the
synthesis of ultra-thin films with Å-level resolution in which a plasma is employed during one …

Atomic layer deposition (ALD) is a cyclic process which relies on sequential self-terminating
reactions between gas phase precursor molecules and a solid surface. The self-limiting …

Atomic layer deposition (ALD) has become an indispensable thin-film technology in the
contemporary microelectronics industry. The unique self-limited layer-by-layer growth …

TiN was grown by atomic layer deposition (ALD) from tetrakis (dimethylamino) titanium
(TDMAT). Both thermal and plasma enhanced processes were studied, with N2 and NH3 as …

With devices being scaled down to the nanometer regime, the need for atomic thickness
control with high conformality is increasing. Atomic layer deposition (ALD) is a key …

Electrification has great impacts on our modern society. To electrify future transportation,
state‐of‐the‐art lithium‐ion batteries (LIBs) are still not sufficient in multiple aspects …

Atomic layer deposition (ALD) is expected to play an important role in future device
fabrication due to various benefits, such as atomic level thickness control and excellent …

This paper focuses on the conformality of the plasma-enhanced atomic layer deposition (PE-
ALD) of using trimethylaluminum [;(TMA)] as a precursor and plasma as an oxidant source …