We report on a III-nitride vertical-cavity surface-emitting laser (VCSEL) with a III-nitride tunnel
junction (TJ) intracavity contact. The violet nonpolar VCSEL employing the TJ is compared to …

We have studied the electrical characteristics and optical properties of GaN/InGaN multiple
quantum well (MQW) light-emitting diodes (LEDs) grown by metalorganic chemical vapor …

The distinct visible electroluminescence (EL) at room temperature has been realized based
on n-Zn O∕ p-Si heterojunction. The EL peak energy coincided well with the deep-level …

InGaN/GaN multiple-quantum-well light-emitting-diode structures utilizing tunnel contact
junctions grown by metalorganic chemical vapor deposition have been demonstrated. The …

This paper mainly describes the status and prospects of GaN-based tunnel junctions grown
by metal-organic vapor-phase epitaxy. GaN-based tunnel junctions are expected to offer an …

Based on numerical simulation and comparison with measured current characteristics, we
show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward …

The reverse leakage current of a GaInN light-emitting diode (LED) is analyzed by
temperature dependent current–voltage measurements. At low temperature, the leakage …

The authors report on the electrical and ultraviolet (UV) photoresponse properties of
quasialigned ZnO nanowires (NWs)∕ p-Si heterojunction grown by a low-temperature …

p-Zn O∕ n-Si heterojunction is achieved by depositing Al–N codoped p-type ZnO film on n-
Si by low-cost sol-gel technique. The junction shows good diode characteristics with …

Closely packed ZnO nanowire array was fabricated on a n-type Si (100) substrate by a
magnetron cosputtering method. The ZnO nanowire/n-Si heterojunction showed good diode …