Abstract Gallium oxide (Ga 2 O 3) is rapidly emerging as a material of choice for the
development of solar blind photodetectors and power electronic devices which are …

The demand for high-efficient and robust power semiconductors in harsh environments such
as high temperature and high voltage has been enlarged with the fast development of the …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Ion implantation-induced effects were studied in Ge implanted β-Ga 2 O 3 with the fluence
and energy of 3× 10 13 cm− 2/60 keV, 5× 10 13 cm− 2/100 keV, and 7× 10 13 cm− 2/200 …

The search for new wide-band-gap materials is intensifying to satisfy the need for more
advanced and energy-efficient power electronic devices. Ga2O3 has emerged as an …

We report on the low-temperature growth of crystalline Ga2O3 films on Si, sapphire, and
glass substrates using plasma-enhanced atomic layer deposition (PEALD) featuring a …

We use a combined generalized spectroscopic ellipsometry and density functional theory
approach to determine and analyze the anisotropic dielectric functions of an α-Ga 2 O 3 thin …

In this work, the atomic level doping of Sn into Ga2O3 films was successfully deposited by
using a plasma-enhanced atomic layer deposition method. Here, we systematically studied …

Ga2O3 is an ultrawide-band-gap semiconductor with excellent physical properties and
promising applications in electronics and photoelectronics. Atomic layer deposition (ALD) is …