Ultraviolet optoelectronic devices based on AlGaN-SiC platform: Towards monolithic photonics integration system
Rapid advancement of wide-bandgap AlGaN semiconductor materials offers tremendous
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
opportunities in the field of ultraviolet (UV) optoelectronics for a wide range of advanced …
III-nitride nanostructures: Emerging applications for Micro-LEDs, ultraviolet photonics, quantum optoelectronics, and artificial photosynthesis
In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …
Ultralow-threshold electrically injected AlGaN nanowire ultraviolet lasers on Si operating at low temperature
Ultraviolet laser radiation has been adopted in a wide range of applications as diverse as
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
water purification, flexible displays, data storage, sterilization, diagnosis and bioagent …
Optoelectronic device physics and technology of nitride semiconductors from the UV to the terahertz
TD Moustakas, R Paiella - Reports on Progress in Physics, 2017 - iopscience.iop.org
This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
semiconductors of the GaN family, operating in the spectral regions from deep UV to …
Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
[HTML][HTML] Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures
Deep ultraviolet (UV) optical emission below 250 nm (∼ 5 eV) in semiconductors is
traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown …
traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown …
Post-annealing effects on RF sputtered all-amorphous ZnO/SiC heterostructure for solar-blind highly-detective and ultralow dark-noise UV photodetector
The rapid progress of wide band gap SiC semiconductor material opens up new
opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and …
opportunities to develop efficient monolithically integrated ultraviolet (UV) photonic and …
Light extraction efficiency analysis of flip-chip ultraviolet light-emitting diodes with patterned sapphire substrate
This study investigates polarization-dependent light extraction efficiency (η extraction) of
AlGaN-based flip-chip ultraviolet (UV) light-emitting diodes (LEDs) emitting at 230 nm and …
AlGaN-based flip-chip ultraviolet (UV) light-emitting diodes (LEDs) emitting at 230 nm and …
Ultraviolet optoelectronic devices based on AlGaN alloys grown by molecular beam epitaxy
TD Moustakas - MRS Communications, 2016 - cambridge.org
This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …
Analysis of polarization-dependent light extraction and effect of passivation layer for 230-nm AlGaN nanowire light-emitting diodes
This paper investigates the polarization-dependent light extraction efficiency (η extraction)
and the effect of passivation layer for AlGaN-based nanowire (NW) deep-ultraviolet (DUV) …
and the effect of passivation layer for AlGaN-based nanowire (NW) deep-ultraviolet (DUV) …