Plasma etching has been enabling nano-electronic fabrication since the 1980s; during this
time, transistor size has shrunk by nearly two orders of magnitude, starting at 1.0 µm in the …

Low‐pressure nonequilibrium plasmas can be a source of intense radiation in the vacuum
ultraviolet (VUV) range which can play an important role in the surface modification of solid …

Chemical vapor deposition (CVD), and its variants, is a more viable technology than the
addition of surface active agents to modify nanoparticle surfaces. While thermally-activated …

UV/VUV photon fluxes in plasma materials processing have a variety of effects ranging from
producing damage to stimulating synergistic reactions. Although in plasma etching …

With the constant decrease of semiconductor device dimensions, line width roughness
(LWR) becomes one of the most important sources of device variability and thus needs to be …

Maskless electron beam lithography is an attractive solution to address sub-90 nm
technology nodes with high throughput and manufacturing costs reduction. One of the key …

The present work focuses on the line width roughness (LWR) transfer and the critical
dimension control during a typical gate stack patterning and shows the benefits of …

Microprocessing of graphene oxide (GO) films is of fundamental importance in fabricating
graphene-based devices. We demonstrate the photoetching of GO sheets using vacuum …

An experimental measurement of the density of excited argon states 1s5, 1s4, 1s3, and 1s2
was carried out for an rf capacitive discharge in argon at a frequency of 13.56 MHz and 81 …

We report the successful fabrication of low-loss sub-micrometric Silicon-On-Insulator strip
waveguides for on-chips links. Several strategies including post-lithography treatment, and …