The past 20 years has witnessed a rapid expansion of applications using metal oxide
semiconductor devices that ranges from displays technology, to clothing and packaging …

This review gives an overview of the recent progress in vacuum-based n-type transition
metal oxide (TMO) thin film transistors (TFTs). Several excellent review papers regarding …

The fabrication of oxide-based p–n heterojunctions that exhibit high rectification
performance has been difficult to realize using standard manufacturing techniques that …

Amorphous InGaZnO x (a-IGZO) thin-film transistors (TFTs) are currently used in flat-panel
displays due to their beneficial properties. However, the mobility of∼ 10 cm2/(V s) for the a …

Mechanically flexible mobile phones have been long anticipated due to the rapid
development of thin-film electronics in the last couple of decades. However, to date, no such …

High mobility thin‐film transistor technologies that can be implemented using simple and
inexpensive fabrication methods are in great demand because of their applicability in a wide …

The effect of gallium (Ga) concentration on the structural evolution of atomic-layer-deposited
indium gallium oxide (IGO)(In1–x Ga x O) films as high-mobility n-channel semiconducting …

Neuromorphic computation based on resistive switching devices represents a relevant
hardware alternative for artificial deep neural networks. For the highest accuracies on …

In this work, high-performance amorphous In0. 75Ga0. 23Sn0. 02O (a-IGTO) transistors with
an atomic layer-deposited Al2O3 dielectric layer were fabricated at a maximum processing …

We experimentally demonstrate back-end-of-the-line (BEOL) compatible (<; 250° C thermal
budget) 1% tungsten (W)-doped amorphous In 2 O 3 (IWO) back-gate field-effect transistor …