A technology roadmap for the electrical performance of high-speed silicon-germanium
(SiGe) heterojunction bipolar transistors (HBTs) is presented based on combining the results …

Integration of mm-wave multiple-antenna systems on silicon-based processes enables
complex, low-cost systems for high-frequency communication and sensing applications. In …

A+ 20 dBm power amplifier (PA) for applications in the 60 GHz industrial scientific medical
(ISM) band is presented. The PA is fabricated in a 0.13-mum SiGe BiCMOS process …

In this paper, a distributed active transformer for the operation in the millimeter-wave
frequency range is presented. The transformer utilizes stacked coupled wires as opposed to …

The simple noise models of field effect and bipolar transistors reviewed in this article are
quite useful in engineering practice, as illustrated by measured and modeled results. The …

The goal of achieving terahertz (THz) transistors within the silicon material system has
generated significant recent interest. In this paper, we use operating temperature as an …

In this letter we report the effect of vertical scaling on the optical and electrical performance
of mid-wavelength infrared heterojunction phototransistors based on type-II InAs/GaSb/AlSb …

Рассмотрены базовые полупроводниковые приборы современной микроэлектроники и
физические процессы, обеспечивающие их работу. Анализируются статические …

The onset of impact ionization-induced instabilities limits the operative range of SiGe hetero-
junction bipolar transistors. Based on referential Monte Carlo simulation results, a critical …

Most of reported HPTs in literatures are based on InGaAs compounds that cover NIR
spectral region. However, InGaAs compounds provide limited cut-off wavelength tunability …