Design and simulation of a high efficiency CdS/CdTe solar cell
A thin film solar cell based on cadmium telluride (CdTe) has been investigated by means of
an accurate numerical simulation study. To optimize the design in terms of power conversion …
an accurate numerical simulation study. To optimize the design in terms of power conversion …
Electron trapping effects in SiC Schottky diodes: Review and comment
JR Nicholls - Microelectronics Reliability, 2021 - Elsevier
SiC devices exhibit a number of detrimental second order effects which are caused by
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
electrically active traps. The majority of studies into traps in SiC devices have been for SiC …
Current-voltage analytical model and multiobjective optimization of design of a short channel gate-all-around-junctionless MOSFET
In this paper we investigate the optimized design of a short channel gate-all-around-
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …
junctionless (GAAJ) metal-oxidesemiconductor field-effect-transistor (MOSFET), including …
Multiobjective optimization of design of 4H-SiC power MOSFETs for specific applications
H Bencherif, L Dehimi, F Pezzimenti… - Journal of Electronic …, 2019 - Springer
The electrical characteristics of a 4H silicon carbide (4H-SiC) metal–oxide–semiconductor
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …
field-effect transistor (MOSFET) have been investigated by using a multiobjective genetic …
Temperature and SiO2/4H-SiC interface trap effects on the electrical characteristics of low breakdown voltage MOSFETs
The temperature and carrier-trapping effects on the electrical characteristics of a 4H silicon
carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned …
carbide (4H-SiC) metal–oxide–semiconductor field effect transistor (MOSFET) dimensioned …
Temperature dependence of electrical behaviour of inhomogeneous Ni/Au/4H–SiC Schottky diodes
J Osvald, L Hrubčín, B Zaťko - Materials Science in Semiconductor …, 2022 - Elsevier
Temperature dependence of electrical parameters of Ni/Au/4H–SiC Schottky diodes in a
small temperature interval has been studied. Current–voltage characteristics were …
small temperature interval has been studied. Current–voltage characteristics were …
Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
M Benaicha, L Dehimi, F Pezzimenti… - Journal of …, 2020 - iopscience.iop.org
The solar power conversion efficiency of a gallium indium phosphide (GaInP)/silicon (Si)
tandem solar cell has been investigated by means of a physical device simulator …
tandem solar cell has been investigated by means of a physical device simulator …
Modelling and performance analysis of a GaN-based n/p junction betavoltaic cell
In this work, we optimized the performance of a gallium nitride (GaN)-based n/p junction
betavoltaic cell irradiated by the radioisotope nickel-63 (N i 63). In particular, we developed …
betavoltaic cell irradiated by the radioisotope nickel-63 (N i 63). In particular, we developed …
An Efficient 4H-SiC photodiode for UV sensing applications
In this paper, we report experimental findings on a 4H-SiC-based pin photodiode. The
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a …
Improving light-sensing behavior of Cu/n-Si photodiode with Human Serum Albumin: Microelectronic and dielectric characterization
This research was mainly focused on the investigation of the effect of Human Serum
Albumin (HSA) on the electrical features of Cu/n-Si device. To do this, HSA layer was grown …
Albumin (HSA) on the electrical features of Cu/n-Si device. To do this, HSA layer was grown …