The human nervous system senses the physical world in an analogue but efficient way. As a
crucial ability of the human brain, sound localization is a representative analogue computing …

Conductive bridging random access memory (CBRAM) has been considered as a promising
candidate for next-generation non-volatile memory. However, there are always problems of …

Abstract Filamentary TiN/Ti/HfO 2/W resistive switching devices were fabricated and
electrically measured setting them in different resistance and degradation conditions. The …

Resistive memory (ReRAM) is an attractive technology to replace Flash technology and/or
serve as a new memory tier. When a fixed programming voltage is applied to the resistive …

Binary Neural Networks (BNN) have binarized (-1 and 1) weights and feature maps.
Achieving smaller model sizes and computational simplicity, they are well suited for edge-AI …

In this study, the resistive switching phenomena in TiN/Ti/HfO2/Ti metal–insulator–metal
stacks is investigated, mainly focusing on the analysis of set and reset transitions. The …

Memristors are a promising building block to the next generation of computing systems.
Since 2008, when the physical implementation of a memristor was first postulated, the …

Low power and ultrafast multi-state storage resistive switching memory (RRAM) device had
been developed based on Al/Al 2 O 3/Al x O y/Al structure. Both of Al 2 O 3 and Al …

Computing-In-Memory (CIM) technology is promising for DNN inference acceleration, in
which ReRAM-based crossbars have received extensive attention in various aspects …

The high potential of memristors as multilevel resistance devices is undermined by their
highly non-linear behaviour and a strong dependency on different sources of variability …