Antiferroelectric oxide thin-films: Fundamentals, properties, and applications

Y Si, T Zhang, C Liu, S Das, B Xu, RG Burkovsky… - Progress in Materials …, 2024 - Elsevier
Antiferroelectrics have received blooming interests because of a wide range of potential
applications in energy storage, solid-state cooling, thermal switch, transducer, actuation, and …

Exploring the Physical Origin of the Negative Capacitance Effect in a Metal–Ferroelectric–Metal–Dielectric Structure

HW Park, S Byun, KD Kim, SK Ryoo… - Advanced Functional …, 2023 - Wiley Online Library
The ferroelectric negative capacitance (NC) draws a great deal of attention for low‐power
negative capacitance field‐effect transistors (NCFET) and NC capacitors. The fabrication of …

High energy density in artificial heterostructures through relaxation time modulation

S Han, JS Kim, E Park, Y Meng, Z Xu, AC Foucher… - Science, 2024 - science.org
Electrostatic capacitors are foundational components of advanced electronics and high-
power electrical systems owing to their ultrafast charging-discharging capability …

Ultralow Subthreshold Swing of a MOSFET Caused by Ferroelectric Polarization Reversal of Hf0.5Zr0.5O2 Thin Films

Y Wang, S Liu, Z Luo, H Gan, H Wang, J Li… - … Applied Materials & …, 2023 - ACS Publications
The emergence of complementary metal–oxide semiconductor (CMOS)-compatible HfO2-
based ferroelectric materials provides a promising way to achieve ferroelectric field-effect …