[图书][B] Thin-film silicon solar cells
A Shah - 2010 - books.google.com
Photovoltaic technology has now developed to the extent that it is close to fulfilling the vision
of a" solar-energy world," as devices based on this technology are becoming efficient, low …
of a" solar-energy world," as devices based on this technology are becoming efficient, low …
Transition between different regimes of rf glow discharges
P Belenguer, JP Boeuf - Physical Review A, 1990 - APS
A self-consistent fluid model of radio-frequency glow discharges has been used to analyze
the existence of two different discharge regimes and the transition between them. The …
the existence of two different discharge regimes and the transition between them. The …
Plasma enhanced chemical vapor deposition of silicon thin films for large area electronics
PR i Cabarrocas - Current Opinion in Solid State and Materials Science, 2002 - Elsevier
In the past 2 years major advances have been made in the understanding of silane–
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …
hydrogen plasmas. In particular, the control of the formation of clusters and even crystallites …
Deposition mechanism of hydrogenated amorphous silicon
J Robertson - Journal of Applied Physics, 2000 - pubs.aip.org
The surface and subsurface processes occurring during the growth of hydrogenated
amorphous silicon (a-Si: H) are analyzed to understand how dangling bond defects and …
amorphous silicon (a-Si: H) are analyzed to understand how dangling bond defects and …
A self-consistent fluid model for radio-frequency discharges in compared to experiments
GJ Nienhuis, WJ Goedheer, EAG Hamers… - Journal of applied …, 1997 - pubs.aip.org
A one-dimensional fluid model for radio-frequency glow discharges is presented which
describes silane/hydrogen discharges that are used for the deposition of amorphous silicon …
describes silane/hydrogen discharges that are used for the deposition of amorphous silicon …
Plasma deposition of hydrogenated amorphous silicon: Studies of the growth surface
JR Abelson - Applied Physics A, 1993 - Springer
This review focusses on the plasma-surface interactions and surface processes involved in
a-Si: H thin film growth. We restrict our discussion of growth fluxes to a summary, and do not …
a-Si: H thin film growth. We restrict our discussion of growth fluxes to a summary, and do not …
Plasma sheath thickness in radio‐frequency discharges
N Mutsukura, K Kobayashi, Y Machi - Journal of applied physics, 1990 - pubs.aip.org
The radio‐frequency glow discharges of several kinds of gases were examined to measure
the ion sheath thickness at the cathode electrode. At intermediate gas pressures around …
the ion sheath thickness at the cathode electrode. At intermediate gas pressures around …
Transition from a capacitive to a resistive regime in a silane radio frequency discharge and its possible relation to powder formation
JP Boeuf, P Belenguer - Journal of applied physics, 1992 - pubs.aip.org
Self‐consistent fluid and particle‐in‐cell models of radiofrequency glow discharges have
been used to analyze the existence of different regimes experimentally observed in silane …
been used to analyze the existence of different regimes experimentally observed in silane …
Hydrogenated amorphous silicon deposited at very high growth rates by an expanding Ar–H2–SiH4 plasma
WMM Kessels, RJ Severens, AHM Smets… - Journal of Applied …, 2001 - pubs.aip.org
The properties of hydrogenated amorphous silicon (a-Si: H) deposited at very high growth
rates 6–80 nm/s by means of a remote Ar–H2–SiH4 plasma have been investigated as a …
rates 6–80 nm/s by means of a remote Ar–H2–SiH4 plasma have been investigated as a …
Plasma and surface reactions during a-Si: H film growth
J Perrin - Journal of non-crystalline solids, 1991 - Elsevier
The mechanisms of a-Si: H film deposition from SiH 4 glow discharges are analyzed. Recent
progress in modeling and diagnostics of electrical power dissipation in DC and RF …
progress in modeling and diagnostics of electrical power dissipation in DC and RF …