Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices
Ferroelectricity in fluorite-structure oxides, such as (doped) HfO2 and ZrO2, and their solid
solution, nanolaminates, and superlattices has attracted increasing interest for future …
solution, nanolaminates, and superlattices has attracted increasing interest for future …
[HTML][HTML] Next generation ferroelectric materials for semiconductor process integration and their applications
Ferroelectrics are a class of materials that possess a variety of interactions between
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
electrical, mechanical, and thermal properties that have enabled a wealth of functionalities …
Large ferroelectric polarization of TiN/Hf0. 5Zr0. 5O2/TiN capacitors due to stress-induced crystallization at low thermal budget
We report on atomic layer deposited Hf 0.5 Zr 0.5 O 2 (HZO)-based capacitors which exhibit
excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm …
excellent ferroelectric (FE) characteristics featuring a large switching polarization (45 μC/cm …
Low‐thermal‐budget fluorite‐structure ferroelectrics for future electronic device applications
Since the first report on the unexpected ferroelectricity of fluorite‐structure oxides in 2011,
this topic has provided a pathway for new research directions and opportunities. Based on …
this topic has provided a pathway for new research directions and opportunities. Based on …
Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress
The critical impact of epitaxial stress on the stabilization of the ferroelectric orthorhombic
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
phase of hafnia is proved. Epitaxial bilayers of Hf0. 5Zr0. 5O2 (HZO) and La0. 67Sr0 …
[HTML][HTML] Domains and domain dynamics in fluorite-structured ferroelectrics
Ferroelectricity in fluorite-structured ferroelectrics such as HfO 2 and ZrO 2 has been
attracting increasing interest since its first publication in 2011. Fluorite-structured …
attracting increasing interest since its first publication in 2011. Fluorite-structured …
Ferroelectric/paraelectric superlattices for energy storage
The polarization response of antiferroelectrics to electric fields is such that the materials can
store large energy densities, which makes them promising candidates for energy storage …
store large energy densities, which makes them promising candidates for energy storage …
Fluorite-structure antiferroelectrics
Ferroelectricity in fluorite-structure oxides like hafnia and zirconia have attracted increasing
interest since 2011. Two spontaneous polarizations of the fluorite-structure ferroelectrics are …
interest since 2011. Two spontaneous polarizations of the fluorite-structure ferroelectrics are …
A Comparative Study on the Ferroelectric Performances in Atomic Layer Deposited Hf0.5Zr0.5O2 Thin Films Using Tetrakis(ethylmethylamino) and Tetrakis …
The chemical, physical, and electrical properties of the atomic layer deposited Hf 0.5 Zr 0.5
O 2 thin films using tetrakis (ethylmethylamino)(TEMA) and tetrakis (dimethylamino)(TDMA) …
O 2 thin films using tetrakis (ethylmethylamino)(TEMA) and tetrakis (dimethylamino)(TDMA) …
A Comprehensive Study on the Effect of TiN Top and Bottom Electrodes on Atomic Layer Deposited Ferroelectric Hf0.5Zr0.5O2 Thin Films
The discovery of ferroelectricity in HfO2-based materials in 2011 provided new research
directions and opportunities. In particular, for atomic layer deposited Hf0. 5Zr0. 5O2 (HZO) …
directions and opportunities. In particular, for atomic layer deposited Hf0. 5Zr0. 5O2 (HZO) …