[HTML][HTML] Tutorial on memristor-based computing for smart edge applications

A Gebregiorgis, A Singh, A Yousefzadeh… - … , Devices, Circuits and …, 2023 - Elsevier
Smart computing on edge-devices has demonstrated huge potential for various application
sectors such as personalized healthcare and smart robotics. These devices aim at bringing …

A survey of test and reliability solutions for magnetic random access memories

P Girard, Y Cheng, A Virazel, W Zhao… - Proceedings of the …, 2020 - ieeexplore.ieee.org
Memories occupy most of the silicon area in nowadays' system-on-chips and contribute to a
significant part of system power consumption. Though widely used, nonvolatile Flash …

Defects, fault modeling, and test development framework for RRAMs

M Fieback, GC Medeiros, L Wu, H Aziza… - ACM Journal on …, 2022 - dl.acm.org
Resistive RAM (RRAM) is a promising technology to replace traditional technologies such
as Flash, because of its low energy consumption, CMOS compatibility, and high density …

A survey on memory-centric computer architectures

A Gebregiorgis, HA Du Nguyen, J Yu… - ACM Journal on …, 2022 - dl.acm.org
Faster and cheaper computers have been constantly demanding technological and
architectural improvements. However, current technology is suffering from three technology …

Voltage tuning for reliable computation in emerging resistive memories

M Mayahinia, A Jafari… - 2022 IEEE 40th VLSI Test …, 2022 - ieeexplore.ieee.org
Emerging non-volatile memories facilitate the Computation in Memory (CiM) paradigm.
Performing operations with the concept of CiM plays a crucial role in the efficiency …

Energy-efficient computation-in-memory architecture using emerging technologies

R Bishnoi, S Diware, A Gebregiorgis… - 2023 International …, 2023 - ieeexplore.ieee.org
Deep Learning (DL) has recently led to remark-able advancements, however, it faces severe
computation related challenges. Existing Von-Neumann-based solutions are dealing with …

Testing STT-MRAM: Manufacturing defects, fault models, and test solutions

L Wu, S Rao, M Taouil, EJ Marinissen… - 2021 IEEE …, 2021 - ieeexplore.ieee.org
STT-MRAM is one of the most promising emerging non-volatile memory technologies. As its
mass production and deployment in industry is around the corner, high-quality yet cost …

Testing and reliability of computing-in memories: solutions and challenges

JF Li - 2022 IEEE International Test Conference in Asia (ITC …, 2022 - ieeexplore.ieee.org
Various computing-in-memory designs have been proposed as a possible computing
architecture for the data-centric computing applications. Existing memories such as random …

Characterization, modeling, and test of intermediate state defects in STT-MRAMs

L Wu, S Rao, M Taouil, EJ Marinissen… - IEEE Transactions …, 2021 - ieeexplore.ieee.org
The manufacturing process of STT-MRAM requires unique steps to fabricate and integrate
magnetic tunnel junction (MTJ) devices which are data-storing elements. Thus …

忆阻器发展现状与标准化展望.

徐晨, 唐双柱, 张建锋, 潘洋… - Electronic Components & …, 2024 - search.ebscohost.com
忆阻器是一种能够实现非易失性存储的新型半导体器件, 具有高密度, 低功耗,
高速度和高可靠性等优点, 可用于高密度信息存储, 智能计算和类脑人工智能等重大战略领域 …