Composition determination of semiconductor alloys towards atomic accuracy by HAADF-STEM
This paper presents a comprehensive investigation of an extended method to determine
composition of materials by scanning transmission electron microscopy (STEM) high angle …
composition of materials by scanning transmission electron microscopy (STEM) high angle …
Controlled formation of stacked si quantum dots in vertical SiGe nanowires
We demonstrate the ability to fabricate vertically stacked Si quantum dots (QDs) within SiGe
nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature …
nanowires with QD diameters down to 2 nm. These QDs are formed during high-temperature …
Sampling optimization of Moiré geometrical phase analysis for strain characterization in scanning transmission electron microscopy
A Pofelski, S Ghanad-Tavakoli, DA Thompson… - Ultramicroscopy, 2020 - Elsevier
A strain characterization technique in a Scanning Transmission Electron Microscope (STEM)
called “STEM Moiré GPA”(SMG) emerged recently as an efficient method to map the …
called “STEM Moiré GPA”(SMG) emerged recently as an efficient method to map the …
Segregation at interfaces in (GaIn) As/Ga (AsSb)/(GaIn) As-quantum well heterostructures explored by atomic resolution STEM
Surface segregation and interaction effects of In and Sb in (GaIn) As/Ga (AsSb)/(GaIn) As-
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
“W”-type quantum well heterostructures (“W”-QWHs) are investigated by high angle annular …
Angle-dependence of ADF-STEM intensities for chemical analysis of InGaN/GaN
In this paper we perform angular resolved annular-dark field (ADF) scanning-transmission
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
electron microscopy (STEM) to study the scattered intensity in an InGaN layer buried in GaN …
Quantitative composition determination by ADF-STEM at a low-angular regime: A combination of EFSTEM and 4DSTEM
S Firoozabadi, P Kükelhan, A Beyer, J Lehr, D Heimes… - Ultramicroscopy, 2022 - Elsevier
High-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) is
a valuable method for composition determination of nanomaterials. However, light elements …
a valuable method for composition determination of nanomaterials. However, light elements …
Surface relaxation of strained Ga (P, As)/GaP heterostructures investigated by HAADF STEM
The surfaces of thin transmission electron microscopy (TEM) specimens of strained
heterostructures can relax. The resulting bending of the lattice planes significantly influences …
heterostructures can relax. The resulting bending of the lattice planes significantly influences …
Atomic structure of 'W'‐type quantum well heterostructures investigated by aberration‐corrected STEM
The atomic structure of (GaIn) As/Ga (AsSb)/(GaIn) As‐'W'‐type quantum well
heterostructures ('W'‐QWHs) is investigated by scanning transmission electron microscopy …
heterostructures ('W'‐QWHs) is investigated by scanning transmission electron microscopy …
Assessment of the strain depth sensitivity of moire sampling scanning transmission electron microscopy geometrical phase analysis through a comparison with dark …
In this study, the Moiré sampling Scanning Transmission Electron Microscopy Geometrical
Phase Analysis (or STEM Moiré GPA) strain characterization method is compared to the well …
Phase Analysis (or STEM Moiré GPA) strain characterization method is compared to the well …
Simultaneous determination of local thickness and composition for ternary III-V semiconductors by aberration-corrected STEM
Scanning transmission electron microscopy (STEM) is a suitable method for the quantitative
characterization of nanomaterials. For an absolute composition determination on an atomic …
characterization of nanomaterials. For an absolute composition determination on an atomic …