Oxide ferroelectric materials based on the ABO3 structure possess net electric polarization
at zero applied fields that give rise to new photovoltaic concepts. One of the peculiar …

Imperfections such as heterogeneity at different length scales, static versus dynamic
disorders, defects in the bulk, surface imperfections, grain boundaries, and interface …

Luminescent ferroelectrics have attracted considerable attention in terms of integrated
photoelectronic devices, most of which are focused on the multicomponent systems of rare …

Recently, considerable progress is achieved in lab prototype perovskite solar cells (PSCs);
however, the stability of outdoor applications of PSCs remains a challenge due to the high …

We report a family of cationic lead halide layered materials, formulated as [Pb2X2] 2+[− O2C
(CH) 2CO2−](X= F, Cl, Br), exhibiting pronounced broadband white‐light emission in bulk …

The effects of carrier thermal escape and retrapping on the temperature dependence of the
photoluminescence of InAs/GaAs self-assembled quantum dots are investigated. A …

Using rapid thermal annealing, we fabricated a series of InAs/GaAs quantum dot samples
with ground-state emission ranging from 1.05 eV to 1.35 eV. This set of annealed samples …

Excited states and energy relaxation processes are studied for stacked InAs/GaAs QD's with
GaAs cap layers grown by migration enhanced epitaxy. Photoluminescence excitation (PLE) …

The photoluminescence properties of I n A s/A ly Ga 1− y As self-assembled quantum dots
are studied as a function of temperature from 10 to 290 K. By varying the Al content the dot …

Temperature‐dependent time‐resolved photoluminescence (TRPL) spectroscopy of high
optical gain CsPbBr3 nanocrystals (NCs) films along with temperature‐dependent steady …