As a key structural parameter, phase depicts the arrangement of atoms in materials.
Normally, a nanomaterial exists in its thermodynamically stable crystal phase. With the …

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-
based ultrathin layers, this family of materials continues to elicit interest. There is ample …

Hafnium oxide–based ferroelectric materials are promising candidates for next-generation
nanoscale devices because of their ability to integrate into silicon electronics. However, the …

Abstract Two-dimensional (2D) van-der-Waals (vdW) layered ferroelectric semiconductors
are highly desired for in-memory computing and ferroelectric photovoltaics or detectors …

Atomic-scale ferroelectrics are of great interest for high-density electronics, particularly field-
effect transistors, low-power logic, and nonvolatile memories. We devised a film with a …

Abstract Domain-wall nanoelectronics is considered to be a new paradigm for non-volatile
memory and logic technologies in which domain walls, rather than domains, serve as an …

Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development
over the last decade, pushing them to the forefront of ultralow-power electronic systems …

Multiferroic materials offer a promising avenue for manipulating digital information by
leveraging the cross-coupling between ferroelectric and ferromagnetic orders. Despite the …

Ferroelectric hafnia-based thin films have attracted intense attention due to their
compatibility with complementary metal-oxide-semiconductor technology. However, the …

The emerging nonvolatile memory technologies based on ferroic materials are promising for
producing high‐speed, low‐power, and high‐density memory in the field of integrated …