The Effect of AlN Buffer Layer on AlGaN/GaN/AlN Double‐Heterostructure High‐Electron‐Mobility Transistor
Herein, the effect of crystal quality of AlN buffer layer on AlGaN/GaN/AlN double‐
heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material …
heterostructure high‐electron‐mobility transistor (DH‐HEMT) is investigated. The material …
Power Performance of AlGaN/GaN High‐Electron‐Mobility Transistors with AlN Buffer on SiC Substrate at 3.5 GHz
Herein, a 3.5 GHz (S‐band) power performance is reported on an AlGaN/GaN high‐electron‐
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
mobility transistor (HEMT) with AlN buffer on SiC substrate. A 4 inch epi‐wafer is grown by …
On/off-state noise characteristics in AlGaN/GaN HFET with AlN buffer layer
The AlGaN/GaN heterojunction field-effect transistor (HFET) with an AlN buffer layer (the
proposed device) was fabricated, and its noise performances were investigated compared to …
proposed device) was fabricated, and its noise performances were investigated compared to …
Effects of Si-doped GaN insert layer in AlGaN/GaN/GaN: Si/AlN DH-HEMT structure
In this study, we investigate the effects of Si-doped GaN insert layer on the structural and
electrical characteristics of AlGaN/GaN/GaN: Si/AlN double-heterostructure high-electron …
electrical characteristics of AlGaN/GaN/GaN: Si/AlN double-heterostructure high-electron …
Device and Noise Performances of AlGaN/GaN High Electron Mobility Transistors with Various GaN Channel Layers Grown on AlN Buffer Layer
AlGaN/GaN high electron mobility transistors (HEMTs) with different GaN channel layers
grown on AlN buffer layer are fabricated and investigated in order to optimize the device …
grown on AlN buffer layer are fabricated and investigated in order to optimize the device …