We report uniaxial tensile strains up to 5.7% along〈 100〉 in suspended germanium (Ge)
wires on a silicon substrate, measured using Raman spectroscopy. This strain is sufficient to …

Group IV lasers are expected to revolutionize chip-to-chip optical communications in terms
of cost, scalability, yield, and compatibility to the existing infrastructure of silicon industries …

This paper reviews near-infrared Ge photonic devices on Si towards photonic-electronic
integrated circuits on a Si platform, which play a significant role in short-reach optical …

A light-trapping-structure vertical Ge photodetector (PD) is demonstrated. In the scheme, a 3
μm radius Ge mesa is fabricated to constrain the optical signal in the circular absorption …

Tensile-strained and n-doped Ge has emerged as a potential candidate for the realization of
optoelectronic devices that are compatible with the mainstream silicon technology. Tensile …

This study reports the bandgap engineering of a Ge epitaxial layer on Si to tune the
operating wavelength of optical intensity modulators and photodetectors in the C (1.530 …

A patterned Si substrate is used to reduce the threading dislocation density (TDD) in a Ge
epitaxial film for near-infrared photonic device applications. Using photolithography and dry …

As the focus of graphene research shifts from fundamental physics to applications, the
scalability and reproducibility of experimental results become ever more important …

In this paper, we report on an optically controlled field effect transistor (OCFET). The device
is based on a modified MOSFET geometry with a Germanium layer interposed between the …

Formation of high spatial frequency laser induced periodic surface structures (HSFL) in
germanium by 90 fs mid-IR pulses at a 1 kHz repetition rate with wavelengths between λ= 2 …