High Performance Electrically‐Injected InGaN Microdisk Lasers through Simultaneous Enhancement of Optical Confinement and Overlap Factor
Despite the considerable research interest in InGaN‐based microdisk lasers, owing to their
unique circular geometry distinct from vertical cavity surface‐emitting lasers (VCSEL) or …
unique circular geometry distinct from vertical cavity surface‐emitting lasers (VCSEL) or …
[PDF][PDF] III-Nitride Materials: Properties, Growth, and Applications
Y Li - Crystals, 2024 - mdpi.com
Since the activation of magnesium (Mg) in p-type gallium nitride (GaN)[1, 2], striking
progress has been made in III-nitride materials in terms of properties, growth, and …
progress has been made in III-nitride materials in terms of properties, growth, and …
Stability of Intensity Imbalance between Left‐and Right‐Circulation Modes in GaN Hexagonal Microdisk
A Syouji, Y Iwamoto, T Kouno… - physica status solidi (a), 2024 - Wiley Online Library
The mechanisms underlying the stability of the intensity imbalance between the left‐and
right‐circulating lasing modes in a GaN hexagonal microdisk resonator are investigated …
right‐circulating lasing modes in a GaN hexagonal microdisk resonator are investigated …