SnO2 semiconductor is a host material for ultraviolet optoelectronic devices applications
because of its wide band gap (3.6 eV), large exciton binding energy (130 meV) and exotic …

SnO2 has been extensively applied in the fields of optoelectronic devices because of its
large band gap, high exciton binding energy, and outstanding optical/electrical properties …

Vertical SnO2 based p‐n junctions are pivotal since they built the core components in
photoelectronic systems. Nevertheless, preparation of high‐quality p‐SnO2 with controllable …

An ultraviolet photodiode based on rutile TiO 2 nanorods, which were grown on p-type Si
substrate seeded with a TiO 2 layer, was synthesized by radiofrequency reactive magnetron …

Fluorine doped tin oxide (FTO) thin films were deposited on glass substrates, at different
substrate temperatures using advanced spray pyrolysis technique. X-ray diffraction studies …

Abstract β-Ga 2 O 3 films were grown on double-side polished MgAl 6 O 10 (1 0 0) substrate
by metal organic chemical vapor deposition (MOCVD) at 600, 650 and 700° C. The …

The fabrication and characterization of a metal–semiconductor–metal ultraviolet
photodetector are studied. The photodetector is based on TiO 2 nanorods (NRs) grown on p …

Abstract p-type nitrogen-doped SnO 2 (SnO 2: N) films were grown by thermal processing of
amorphous tin nitride films at temperatures between 350 and 500á∘ C in flowing O 2–Ar gas …

The development of integrated photonics and lab-on-a-chip platforms for environmental and
biomedical diagnostics demands ultraviolet electroluminescent materials with high …

A novel p-CuBi 2 O 4/n-SnO 2 heterostructure photocatalyst with different mass ratios was
synthesized by the solid state technique, and characterized by X-ray diffraction (XRD) …