In this article, threshold-voltage V TH instabilities under positive gate voltage stress V
GStress in GaN-on-Si devices are thoroughly investigated. Measurement-stress …

In this study, we investigate the difference between ID (VG) and C (VG) pBTI shifts on GaN-
on-Si E-mode MOS-channel HEMTs, under various gate voltage stresses (V GStress) and …

For the first time, ultrafast AC pBTI measurements are applied to GaN on Si E-mode MOSc-
HEMT and compared to DC pBTI. Full recess Al 2 O 3/GaN MOS gate is submitted to AC …

The negative bias temperature instability (NBTI) is investigated in ultrathin body ultrathin box
(UTBB) fully depleted silicon-on-insulator (FD-SOI) p-MOSFETs with zero back gate bias …

The aging process due to Bias Temperature Instability (both NBTI and PBTI) and Channel
Hot Carrier (CHC) is a key limiting factor of circuit lifetime in CMOS design. Threshold …

Aging due to bias-temperature-instability (BTI) is the dominant cause of functional failure in
large scale logic circuits. Power efficient techniques such as clock gating or dynamic voltage …

A novel Flash endurance characterization approach is presented, allowing delay-free READ
operations and thus a realistic electrostatic description at each cycle before any device …

A new method denoted SRP is proposed to quickly evaluate reversible and permanent
components responsible for BTI degradation. It is based on a particular normalization of …

In this paper we use a statistical analysis of NBTI stress and recoverable components
measured on Pfet devices issued from ST Microelectronics 28nm FDSOI technology. NBTI …

Aging effects in digital circuits change the switching characteristics of their transistors,
resulting in timing violations that can lead to functional errors at the system level. In …