Standards for the characterization of endurance in resistive switching devices
Resistive switching (RS) devices are emerging electronic components that could have
applications in multiple types of integrated circuits, including electronic memories, true …
applications in multiple types of integrated circuits, including electronic memories, true …
[HTML][HTML] Reliability of analog resistive switching memory for neuromorphic computing
As artificial intelligence calls for novel energy-efficient hardware, neuromorphic computing
systems based on analog resistive switching memory (RSM) devices have drawn great …
systems based on analog resistive switching memory (RSM) devices have drawn great …
Probabilistic neural computing with stochastic devices
S Misra, LC Bland, SG Cardwell… - Advanced …, 2023 - Wiley Online Library
The brain has effectively proven a powerful inspiration for the development of computing
architectures in which processing is tightly integrated with memory, communication is event …
architectures in which processing is tightly integrated with memory, communication is event …
A functional hybrid memristor crossbar-array/CMOS system for data storage and neuromorphic applications
Crossbar arrays based on two-terminal resistive switches have been proposed as a leading
candidate for future memory and logic applications. Here we demonstrate a high-density …
candidate for future memory and logic applications. Here we demonstrate a high-density …
In-memory learning with analog resistive switching memory: A review and perspective
In this article, we review the existing analog resistive switching memory (RSM) devices and
their hardware technologies for in-memory learning, as well as their challenges and …
their hardware technologies for in-memory learning, as well as their challenges and …
Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model
The conduction mechanism of metal oxide resistive switching memory is debated in the
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
literature. We measured the IV characteristics below the switching voltages through TiN/HfO …
Filament growth and resistive switching in hafnium oxide memristive devices
We report on the resistive switching in TiN/Ti/HfO2/TiN memristive devices. A resistive
switching model for the device is proposed, taking into account important experimental and …
switching model for the device is proposed, taking into account important experimental and …
Thermal crosstalk in 3-dimensional RRAM crossbar array
Abstract High density 3-dimensional (3D) crossbar resistive random access memory
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
(RRAM) is one of the major focus of the new age technologies. To compete with the ultra …
Oxygen Ion Drift‐Induced Complementary Resistive Switching in Homo TiOx/TiOy/TiOx and Hetero TiOx/TiON/TiOx Triple Multilayer Frameworks
YC Bae, AR Lee, JB Lee, JH Koo… - Advanced functional …, 2012 - Wiley Online Library
Developing a means by which to compete with commonly used Si‐based memory devices
represents an important challenge for the realization of future three‐dimensionally stacked …
represents an important challenge for the realization of future three‐dimensionally stacked …
Random Telegraph Noise in Metal‐Oxide Memristors for True Random Number Generators: A Materials Study
Some memristors with metal/insulator/metal (MIM) structure have exhibited random
telegraph noise (RTN) current signals, which makes them ideal to build true random number …
telegraph noise (RTN) current signals, which makes them ideal to build true random number …