Change in topography of InAs submonolayer nanostructures at the 2D to 3D transition
A strong topographical evidence of the 2D to 3D transition in InAs/GaAs nanostructures
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
assembled by the submonolayer (SML) growth mode using molecular beam epitaxy (MBE) …
Molecular beam epitaxy for oxide electronics
26.1 Introduction k Metal oxides are the most abundant of all compounds found on Earth,
many of which serve as ores for the extraction of pure elements. Initially thought to be …
many of which serve as ores for the extraction of pure elements. Initially thought to be …
[HTML][HTML] Size-dependent mobility of gold nano-clusters during growth on chemically modified graphene
Gold nano-clusters were grown on chemically modified graphene by direct sputter
deposition. Transmission electron microscopy of the nano-clusters on these electron …
deposition. Transmission electron microscopy of the nano-clusters on these electron …
Hopkins-Skellam index and origin of spatial regularity in InAs quantum dot formation on GaAs (001)
We investigate the origin of the spatial regularity of arrays of InAs quantum dots (QDs) grown
on GaAs (001). The Hopkins-Skellam index (HSI) is used with a newly developed …
on GaAs (001). The Hopkins-Skellam index (HSI) is used with a newly developed …
Interaction of Mn with GaAs and InSb: incorporation, surface reconstruction and nano-cluster formation
CW Burrows, SA Hatfield, F Bastiman… - Journal of Physics …, 2014 - iopscience.iop.org
The deposition of Mn on to reconstructed InSb and GaAs surfaces, without coincident As or
Sb flux, has been studied by reflection high energy electron diffraction, atomic force …
Sb flux, has been studied by reflection high energy electron diffraction, atomic force …
Correlation between the structure and luminescence of InAs submonolayer stacked nanostructures
The correlation between the structure, measured by atomic force microscopy (AFM), and
luminescence, measured by photoluminescence (PL), of InAs submonolayer stacked …
luminescence, measured by photoluminescence (PL), of InAs submonolayer stacked …
Atomistic behaviour of (n× 3)-reconstructed areas of InAs–GaAs (001) surface at the growth condition
We have investigated the spatial evolution of (n× 3) surface reconstructed areas during the
molecular beam epitaxial growth of InAs–GaAs (001) by using ab initio-based calculation …
molecular beam epitaxial growth of InAs–GaAs (001) by using ab initio-based calculation …
Optical Rectification and Second Harmonic Generation on Quasi‐Realistic InAs/GaAs Quantum Dots: With Attention to Wetting Layer Effect
A Khaledi-Nasab, M Sabaiean… - International …, 2013 - Wiley Online Library
In this paper, we have performed a theoretical study on nonlinear optical rectification (OR)
and second harmonic generation (SHG) for three‐level dome‐shaped InAs/GaAs quantum …
and second harmonic generation (SHG) for three‐level dome‐shaped InAs/GaAs quantum …
Effect of surface structural change on adsorption behavior on InAs wetting layer surface grown on GaAs (001) substrate
T Akiyama, K Yonemoto, F Hishiki, T Ito - Journal of Crystal Growth, 2021 - Elsevier
The effect of surface structural change on the adsorption behavior of In adatom during the
growth of InAs wetting layer (WL) on GaAs (001) substrate is theoretically investigated on the …
growth of InAs wetting layer (WL) on GaAs (001) substrate is theoretically investigated on the …
Scaling properties of planar discrete Poisson-Voronoi tessellations with von Neumann neighborhoods constructed according to the nucleation and growth mechanism
A Korobov - Physical Review E, 2014 - APS
In contrast to the conventional continual case, discrete Poisson-Voronoi tessellations
resulting from the growth to impingement of random nuclei differ from tessellations …
resulting from the growth to impingement of random nuclei differ from tessellations …