Atomic layer deposition
M Ritala, M Leskelä - Handbook of Thin Films, 2002 - Elsevier
Publisher Summary This chapter deals with atomic layer deposition (ALD), which is a
chemical gas phase thin film deposition method based on alternate saturative surface …
chemical gas phase thin film deposition method based on alternate saturative surface …
[图书][B] Internal photoemission spectroscopy: principles and applications
VV Afanas' ev - 2010 - books.google.com
The monographic book addresses the basics of the charge carrier photoemission from one
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
solid to another-the internal photoemission,(IPE)-and different spectroscopic applications of …
Study of La-induced flat band voltage shift in metal/HfLaOx/SiO2/Si capacitors
Y Yamamoto, K Kita, K Kyuno… - Japanese Journal of …, 2007 - iopscience.iop.org
The flat band voltage in metal/HfLaO x/SiO 2/Si capacitors has been investigated as a
function of La concentration in HfLaO x. We have found that with an increase of La …
function of La concentration in HfLaO x. We have found that with an increase of La …
Atomic mechanism of electric dipole formed at high-K: SiO2 interface
L Lin, J Robertson - Journal of Applied Physics, 2011 - pubs.aip.org
The mechanism of flat-band voltage shifts in La-and Al-based, etc., oxide capping layers in
high-K (dielectric constant) metal gate stacks is investigated by ab initio calculations on …
high-K (dielectric constant) metal gate stacks is investigated by ab initio calculations on …
Examination of flatband and threshold voltage tuning of HfO2∕ TiN field effect transistors by dielectric cap layers
The authors have examined the role of sub nanometer La 2 O 3 and LaN cap layers
interposed in Si∕ Hf O 2∕ Ti N high-k gate dielectric stacks in tuning the flatband and …
interposed in Si∕ Hf O 2∕ Ti N high-k gate dielectric stacks in tuning the flatband and …
Re-distribution of oxygen at the interface between γ-Al2O3 and TiN
EO Filatova, AS Konashuk, SS Sakhonenkov… - Scientific reports, 2017 - nature.com
Interface of TiN electrode with γ-Al2O3 layers was studied using near edge X-ray absorption
fine structure, conventional X-ray photoelectron spectroscopy and photoelectron …
fine structure, conventional X-ray photoelectron spectroscopy and photoelectron …
Increasing the thermal stability of a Cr/Sc multilayer by nitriding
EO Filatova, SS Sakhonenkov, AV Solomonov… - Applied Surface …, 2024 - Elsevier
The effect of nitridation of Cr, Sc or both layers in the ultrathin multilayer structure Sc/Cr on
the intermixing of thin Cr and Sc layers, as-deposited and after annealing at different …
the intermixing of thin Cr and Sc layers, as-deposited and after annealing at different …
Band offsets and work function control in field effect transistors
J Robertson - Journal of Vacuum Science & Technology B …, 2009 - pubs.aip.org
The article summarizes the development of metal gate materials and the control of the
effective work function on high dielectric constant (high K) oxides for use in advanced Si …
effective work function on high dielectric constant (high K) oxides for use in advanced Si …
Silicate formation and thermal stability of ternary rare earth oxides as high-k dielectrics
Hf-based dielectrics are currently being introduced into complementary metal oxide
semiconductor transistors as replacement for SiON to limit gate leakage current densities …
semiconductor transistors as replacement for SiON to limit gate leakage current densities …
Interaction of La2O3 capping layers with HfO2 gate dielectrics
We report the effect of La 2 O 3 capping layers on HfO 2/SiO 2/Si dielectrics, proposed for
use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy …
use in threshold voltage tuning of field effect transistors. Depth profiling with medium energy …