This paper describes the design and modeling of CMOS transistors, integrated passives,
and circuit blocks at millimeter-wave (mm-wave) frequencies. The effects of parasitics on the …

The unlicensed band around 60 GHz can be utilized for wireless communications at data
rates of several gigabits per second. This paper describes a receiver front-end that …

This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a
SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal …

The feasibility of integrating antennas and required circuits to form wireless interconnects in
foundry digital CMOS technologies has been demonstrated. The key challenges including …

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-
wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar …

A 24-GHz+ 14.5-dBm fully integrated power amplifier with on-chip 50-/spl Omega/input and
output matching is demonstrated in 0.18-/spl mu/m CMOS. The use of substrate-shielded …

In this paper, the design and analysis of CMOS multicascode configuration with noise
reduction topology are proposed. Two low power and miniature low-noise amplifiers (LNAs) …

We present the design and measurement results of millimeter-wave integrated circuits
implemented in 65-nm baseline CMOS. Both active and passive test structures were …

This article presents K/Ka-band low-noise-amplifiers (LNAs) for 5G front ends. The use of
forward body bias (FBB) in fully depleted silicon-on-insulator (FDSOI) devices is studied and …

In this paper, the design and analysis of CMOS low-noise amplifiers (LNAs) with a magnetic
coupled technique in different cascode topologies are proposed. To minimize the noise …