An overview of conventional and new advancements in high kappa thin film deposition techniques in metal oxide semiconductor devices
P Devaray, SFWM Hatta, YH Wong - Journal of Materials Science …, 2022 - Springer
In the last three decades, study has seen the evolution of metal oxide semiconductor (MOS)
devices as device geometries have shrunk in line with Moore's law. This device shrunk …
devices as device geometries have shrunk in line with Moore's law. This device shrunk …
A review of rare-earth oxide films as high k dielectrics in MOS devices—Commemorating the 100th anniversary of the birth of Academician Guangxian Xu
S Li, Y Lin, S Tang, L Feng, X Li - Journal of Rare Earths, 2021 - Elsevier
Recently, rare-earth oxide films have attracted more and more attention as gate dielectrics in
metal-oxide-semiconductor (MOS) devices, showing the advantages of high dielectric …
metal-oxide-semiconductor (MOS) devices, showing the advantages of high dielectric …
Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al2O3-Passivated High-k HfGdOx Dielectrics
Y Zhang, Y Lin, G He, B Ge, W Liu - ACS Applied Electronic …, 2020 - ACS Publications
High-speed operation and low-power-consumption requirements have accelerated the
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …
development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work …
[HTML][HTML] High-contrast, highly textured VO2 thin films integrated on silicon substrates using annealed Al2O3 buffer layers
We present vanadium dioxide (VO 2) thin films having high resistivity contrast with silicon
substrates through use of crystallized alumina (Al 2 O 3) buffer layers, engineered for this …
substrates through use of crystallized alumina (Al 2 O 3) buffer layers, engineered for this …
Solution processed low band gap ion-conducting gate dielectric for low voltage metal oxide transistor
Low band gap ion conducting Li 2 ZnO 2 thin film has been synthesized by low cost solution
processed technique and has been employed to fabricate low operating voltage metal oxide …
processed technique and has been employed to fabricate low operating voltage metal oxide …
Surface passivation engineering approach to fluoroacrylate-incorporated polytetrafluoroethylene for highly reliable a-IGZO TFTs
F Shan, HL Zhao, XL Wang, JY Lee… - Journal of Materials …, 2022 - pubs.rsc.org
Amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) have attracted
considerable attention for cutting-edge and next-generation electronics applications …
considerable attention for cutting-edge and next-generation electronics applications …
Enhanced memory window and efficient resistive switching in stabilized BaTiO3-based RRAM through incorporation of Al2O3 interlayer
As artificial intelligence and big data become increasingly prevalent, resistive random-
access memory (RRAM) has become one of the most promising alternatives for storing …
access memory (RRAM) has become one of the most promising alternatives for storing …
Ni doping significantly improves dielectric properties of La2O3 films
S Li, Y Lin, Y Wu, X Li, W Tian - Journal of Alloys and Compounds, 2020 - Elsevier
With rapid development of integrated circuits, a long-standing challenge is to seek new gate
dielectrics to replace HfO 2. Lanthanum oxide (La 2 O 3) has earned more and more …
dielectrics to replace HfO 2. Lanthanum oxide (La 2 O 3) has earned more and more …
Ta-doped modified Gd2O3 film for a novel high k gate dielectric
S Li, Y Wu, G Li, H Yu, K Fu, Y Wu, J Zheng… - Journal of Materials …, 2019 - Elsevier
Abstract Gadolinium oxide (Gd 2 O 3) film has potential as a candidate gate dielectric to
replace HfO 2. In this work, we provide a simple method by trace Ta (∼ 1%) doping to …
replace HfO 2. In this work, we provide a simple method by trace Ta (∼ 1%) doping to …
Significantly improved high k dielectric performance: rare earth oxide as a passivation layer laminated with TiO2 film
S Li, W Wang, Y Lin, L Wang, X Li - Journal of Rare Earths, 2023 - Elsevier
In order to achieve a super gate dielectric performance, rare earth oxides featuring for large
band gap, good thermodynamic stability and relatively high k value were selected to be …
band gap, good thermodynamic stability and relatively high k value were selected to be …