It's a trap! On the nature of localised states and charge trapping in lead halide perovskites
The recent surge of scientific interest for lead halide perovskite semiconductors and
optoelectronic devices has seen a mix of materials science sub-fields converge on the same …
optoelectronic devices has seen a mix of materials science sub-fields converge on the same …
On the nature of majority and minority traps in β-Ga2O3: A review
In the last decade, researchers and commercial companies have paid great attention to
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
ultrawide bandgap semiconductors especially gallium oxide (Ga 2 O 3). Ga 2 O 3 has very …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Measurement and analysis of photoluminescence in GaN
MA Reshchikov - Journal of applied physics, 2021 - pubs.aip.org
Photoluminescence (PL) spectroscopy is a powerful tool in studying semiconductor
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
properties and identifying point defects. Gallium nitride (GaN) is a remarkable …
Defects in ferroelectric HfO 2
A Chouprik, D Negrov, EY Tsymbal, A Zenkevich - Nanoscale, 2021 - pubs.rsc.org
The discovery of ferroelectricity in polycrystalline thin films of doped HfO2 has reignited the
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
expectations of developing competitive ferroelectric non-volatile memory devices. To date, it …
SiC detectors: A review on the use of silicon carbide as radiation detection material
M De Napoli - Frontiers in physics, 2022 - frontiersin.org
Silicon Carbide (SiC) is a wide bandgap semiconductor with many excellent properties that
make it one of the most promising and well-studied materials for radiation particle detection …
make it one of the most promising and well-studied materials for radiation particle detection …
Microscopic insight into non-radiative decay in perovskite semiconductors from temperature-dependent luminescence blinking
Organo-metal halide perovskites are promising solution-processed semiconductors,
however, they possess diverse and largely not understood non-radiative mechanisms. Here …
however, they possess diverse and largely not understood non-radiative mechanisms. Here …
Majority and Minority Carrier Traps in NiO/β-Ga2O3 p+-n Heterojunction Diode
Identifying defects/traps is of vital importance for the implementation of high-performance Ga
2 O 3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide …
2 O 3 power devices. In this work, majority and minority carrier traps in beta-gallium oxide …
[HTML][HTML] Defects responsible for charge carrier removal and correlation with deep level introduction in irradiated β-Ga2O3
AY Polyakov, NB Smirnov, IV Shchemerov… - Applied Physics …, 2018 - pubs.aip.org
Carrier removal rates and electron and hole trap densities in β-Ga 2 O 3 films grown by
hydride vapor phase epitaxy (HVPE) and irradiated with 18 MeV α-particles and 20 MeV …
hydride vapor phase epitaxy (HVPE) and irradiated with 18 MeV α-particles and 20 MeV …
[HTML][HTML] Interactions of hydrogen atoms with boron and gallium in silicon crystals co-doped with phosphorus and acceptors
TOA Fattah, VP Markevich, D Gomes, J Coutinho… - Solar Energy Materials …, 2023 - Elsevier
Reports showing that hydrogen and group-III acceptors play an important role in Light-and
elevated Temperature-induced Degradation (LeTID) of Si-based solar cells highlight the …
elevated Temperature-induced Degradation (LeTID) of Si-based solar cells highlight the …