On the band gap anomaly in I–III–VI2, I–III3–VI5, and I–III5–VI8 families of Cu ternaries
The experimentally observed energy band gap difference (E1) between the I–III3–VI5 and I–
III–VI2 and the energy band gap difference (E2) between the I–III5–VI8 and I–III–VI2 phases …
III–VI2 and the energy band gap difference (E2) between the I–III5–VI8 and I–III–VI2 phases …
Temperature dependence of the optical energy gap and Urbach–Martienssen's tail in the absorption spectra of the layered semiconductor Tl2GaInSe4
B Abay, HS Güder, H Efeoğlu, YK Yoğurtçu - Journal of Physics and …, 2001 - Elsevier
The effect of temperature on the optical energy gap for Tl2GaInSe4 layered crystals were
investigated in the temperature range of 10–330K. The variation of the optical absorption …
investigated in the temperature range of 10–330K. The variation of the optical absorption …
Synthesis and Structures of New Ternary Aluminum Chalcogenides: LiAlSe2, α-LiAlTe2, and β-LiAlTe2
J Kim, T Hughbanks - Inorganic chemistry, 2000 - ACS Publications
The synthesis and crystal structures of new ternary aluminum chalcogenides, LiAlSe2, α-
LiAlTe2, and β-LiAlTe2, are reported. These compounds are synthesized by solid-state …
LiAlTe2, and β-LiAlTe2, are reported. These compounds are synthesized by solid-state …
The density functional study of electronic structure, electronic charge density, linear and nonlinear optical properties of single crystal alpha-LiAlTe2
Self-consistent calculations is performed using the full potential linear augmented plane
wave (FP-LAPW) technique based on density functional theory (DFT) to investigate the …
wave (FP-LAPW) technique based on density functional theory (DFT) to investigate the …
The effect of γ-irradiation on the optical parameters of AgInTe2 Films
A El-Korashy - Radiation effects and defects in solids, 2001 - Taylor & Francis
Some optical properties in AgInTe2 thin films are studied as a function of γ dose. The
absorbance and transmittance spectra of the films were analyzed. The compound shows an …
absorbance and transmittance spectra of the films were analyzed. The compound shows an …
Electronic and optical properties for Li1-xAgxAlTe2 alloys: potential transparent conductive material
S Kang, J Wang, L Yang, SW Fan - Physica Scripta, 2024 - iopscience.iop.org
Using the hybrid functionals combining the special quasi-random structure methods, the
properties of LiAlTe 2, AgAlTe 2, and their alloys (Li 1-x Ag x AlTe 2) are studied. Our study …
properties of LiAlTe 2, AgAlTe 2, and their alloys (Li 1-x Ag x AlTe 2) are studied. Our study …
Compositional and temperature dependence of the energy band gap of CuxInySe2 epitaxial layers
HY Xu, D Papadimitriou, L Zoumpoulakis… - Journal of Physics D …, 2008 - iopscience.iop.org
The compositional and temperature dependence of the energy band gap of Cu x In y Se 2
epitaxial layers grown by metal-organic chemical vapour deposition on GaAs (1 0 0) …
epitaxial layers grown by metal-organic chemical vapour deposition on GaAs (1 0 0) …
Optoelectronic characterization of thin-film solar cells by electroreflectance and luminescence spectroscopy
CD Krämmer - 2015 - publikationen.bibliothek.kit.edu
Im Rahmen dieser Arbeit wurden Dünnschichtsolarzellen mit etablierten
Halbleiterspektroskopiemethoden, insbesondere Elektroreflektanzspektroskopie …
Halbleiterspektroskopiemethoden, insbesondere Elektroreflektanzspektroskopie …
Dependence of Crystal‐Field Energy on Strain/Stress Sensed by Temperature Variation of Chalcopyrite Semiconductor (Optical) Band‐Gap for Efficient Band‐Gap …
DN Papadimitriou - physica status solidi (b) - Wiley Online Library
Chalcopyrite selenide single crystals and epitaxial layers (CuIn1− xGaxSe2, x= 0.00, 0.08,
0.19, 1.00) were characterized by temperature‐dependent photoreflectance (PR) …
0.19, 1.00) were characterized by temperature‐dependent photoreflectance (PR) …
Positive temperature variation of the bandgap energy in the single-crystalline chalcopyrite semiconductor AgInS2
S Ozaki, Y Horikoshi - Journal of Applied Physics, 2014 - pubs.aip.org
Optical absorption spectra have been measured on the single-crystalline chalcopyrite
semiconductor AgInS 2 using polarized light at T= 10–300 K. The bandgap energy E g of …
semiconductor AgInS 2 using polarized light at T= 10–300 K. The bandgap energy E g of …