Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs (111) Metamorphic Substrates

Local droplet etching of a vicinal InGaAs (111) A metamorphic layer

A Tuktamyshev, D Lambardi, S Vichi, F Cesura… - Applied Surface …, 2024 - Elsevier
We demonstrated nanopit formation by Ga-assisted local droplet etching technique in
InGaAs metamorphic layers grown on vicinal GaAs (111) A substrates. We studied nanopit …
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Droplet free self-assembling of high density nanoholes on GaAs (100) via thermal drilling

F Cesura, S Vichi, A Tuktamyshev, S Bietti… - Journal of Crystal …, 2024 - Elsevier
Dense arrays of self-assembled nanoholes are fabricated in GaAs (100) surfaces by As-free
oxide cleaning thermal process. The formation of pit-like structures above 500° C occurs by …
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