Three fundamental types of suppressor additives for copper electroplating could be
identified by means of potential transient measurements. These suppressor additives differ …

The competitive interaction of chloride and SPS (bis-(sodium-sulfopropyl)-disulfide) at Cu
(100)/electrolyte model interfaces was studied by means of cyclic voltammetry in …

This study reinvestigates the electrochemical characteristics of three different suppressor
additives that are used in context of industrial copper plating (Damascene, Through-Silicon …

Patterned 100 nm trenches with an aspect ratio of 3.5 are filled at a nominal current density
of. A low acid copper plating bath is used with the accelerator bis (3-sulfopropyl)-disulfide …

The effect of dimethylglyoxime on Co electrodeposition was investigated with cyclic
voltammetry, chronopotentiometry, quartz microbalance as well as electrochemical …

Through silicon via (TSV) technology has been researched for 3-dimensional packaging of
electronic devices, and Cu electrodeposition has been used for TSV filling. The organic …

The impurities incorporated in the electrodeposited 40 nm Cu lines as well as in blanket Cu
films were studied. Two different levelers were used in the study. While the impurity in the …

One of the main concerns in fabricating Cu interconnections is a significant increase in
resistivity. Thus, pulse-reverse electrodeposition was implemented in an attempt to improve …

The electrochemical behavior of levelers was studied and compared for two commercial Cu
plating chemistries in an effort to correlate the electrochemical behaviors with their impacts …

The electrodeposition of indium on copper substrates is studied in an acid sulfate solution
for applications in (CIS) and (CIGS) solar cells. The study is focused on the film morphology …