Abstract The two-dimensional (2D) metal nitrides (MNs), including group IIA nitrides, group
IIIA nitrides, nitride MXene and other transition metal nitrides (TMNs), exhibit unique …

Minimizing carrier recombination at contact regions by using carrier‐selective contact
materials, instead of heavily doping the silicon, has attracted considerable attention for high …

The growing need for increasingly miniaturized devices has placed high importance and
demands on nanofabrication technologies with high-quality, low temperatures, and low-cost …

In this study, tantalum nitride (TaN) thin films were deposited on Si (100) and 316L stainless
steel (SS) substrates by reactive DC magnetron sputtering. The effect of the nitrogen fraction …

By reactive DC magnetron sputtering from a pure Ta target onto silicon substrates, Ta (N)
films were prepared with different N2 flow rates of 0, 12, 17, 25, 38, and 58 sccm. The effects …

We report on the development and characterization of superconducting damascene
tantalum nitride (TaN) nanowires, 100 nm–3 μ m wide, with TaN thicknesses varying from 5 …

TaN (Ag) composited coatings are being investigated to improve biocompatibility of different
biomedical devices due to the mechanical and chemical stability of TaN and bactericidal …

Ta2N is an effective diffusion barrier material to prevent undesired Cu diffusion in ultra-large
scale integration circuits. Previous theoretical work has reported the interesting result that at …

We have optimized the growth of superconducting TaN thin films on SiO 2 substrates via dc
magnetron sputtering and extract a maximum superconducting transition temperature of T c …

Manganese nitride films have been successfully fabricated by the technique of plasma
enhanced atomic layer deposition (PEALD). The process employed bis (N, N'-di-tert …