Gain-frequency-current relation for Pb1-xSnxTe double heterostructure lasers
W Anderson - IEEE Journal of Quantum Electronics, 1977 - ieeexplore.ieee.org
The active region gain expression for Pb 1-x Sn x Te lasers is obtained from the k ⋅ p model
of the conduction and valence band extrema. Curves of gain versus frequency with current …
of the conduction and valence band extrema. Curves of gain versus frequency with current …
SnSe single crystals: sublimation growth, deviation from stoichiometry and electrical properties
H Maier, DR Daniel - Journal of Electronic Materials, 1977 - Springer
Large SnSe single crystals of high metallurgical quality have been grown by a closed tube
vapor phase technique. Hall measurements on annealed and quenched samples were …
vapor phase technique. Hall measurements on annealed and quenched samples were …
Semiconductor lasers with wavelengths exceeding 2 μm
Y Horikoshi - Semiconductors and Semimetals, 1985 - Elsevier
Publisher Summary Semiconductor lasers with wavelengths exceeding 2 μm are at a very
early stage in their development. This chapter summarizes semiconductor materials and …
early stage in their development. This chapter summarizes semiconductor materials and …
Life time measurements in PbTe and PbSnTe
B Schlicht, R Dornhaus, G Nimtz, LD Haas… - Solid-State …, 1978 - Elsevier
Experimental life time data of n-type PbTe and Pb 0.8 Sn 0.2 Te epitaxial layers are
reported. Experiments were carried out with photoionized and impact ionized excess …
reported. Experiments were carried out with photoionized and impact ionized excess …
Defects in IV–VI compounds
H Heinrich - Narrow Gap Semiconductors Physics and Applications …, 2005 - Springer
The lead sails, tin salts and germanium salts have particular properties which-in some
respecLs-places them somewhat in between semiconductors and metals. This has been …
respecLs-places them somewhat in between semiconductors and metals. This has been …
Temperature dependence of mobility in heavily doped n-type PbTe layers grown by LPE
Z Feit, A Zemel, D Eger, S Szapiro - Physics Letters A, 1983 - Elsevier
The temperature dependence of mobility in n-type liquid-phase epitaxial PbTe layers heavily
doped with In or Ga was studied. Mobility was calculated taking into account impurity …
doped with In or Ga was studied. Mobility was calculated taking into account impurity …
Narrow-gap lead salts
R Dornhaus, G Nimtz, B Schlicht, G Nimtz… - Narrow-Gap …, 1983 - Springer
The narrow-gap semiconductors among the family of IV-VI compounds and their
pseudobinary alloys show some extraordinary aspects of solid-state physics. The …
pseudobinary alloys show some extraordinary aspects of solid-state physics. The …
MICROWAVE AND FAR-INFRARED MAGNETO-OPTICAL STUDIES IN SEMICONDUCTORS: ELECTRON PARAMAGNETIC RESONANCE IN CADMIUM (1-X) …
HA SAYAD - 1985 - search.proquest.com
TOM ’TMversify Mcrofiims , International Page 1 INFORMATION TO USERS This
reproduction was made from a copy of a manuscript sent to us for publication and …
reproduction was made from a copy of a manuscript sent to us for publication and …