Abstract Tri-Gate (TG) FinFETs are the most reliable option to get into deeply scaled gate
lengths. This paper analyses an optimized 5 nm gate length (LG) n-channel TG Junctionless …

Silicon (Si) ultrathin junctionless (JL) n-FinFET with LG= 3 nm and 1 nm are explored for the
first time by invoking Hf x Ti 1-x O 2 based high-k gate dielectric. The 3D device performance …

The electronics devices are facing a foremost drawback of standby leakage, which will
severely impact the electronics industry from the past few decades. As well as the need for …

This work presents the analog and RF performance evaluation of Junctionless Accumulation
Mode (JAM) Gate Stack Gate All Around (GS-GAA) FinFET, and the results acquired have …

In this paper, we have studied the impact of various dielectric single-k (Sk) and dual-k (Dk)
spacers on optimized Junctionless (JL) FinFET at nano-regime by using hetero-dielectric …

In this article, we investigated the impact of temperature variation on DC, analog, RF, and
wireless performance of Gate Stack Gate All Around (GS-GAA) FinFET using SILVACO Atlas …

This paper optimizes the fin aspect ratio (AR) of Junctionless Accumulation Mode Gate Stack
Gate All Around (JAM-GS-GAA) FinFET with constant conducting channel area for upgraded …

This review article presents a journey from Fin-shaped field effect transistor (FinFET) to gate-
all-around multi-bridge channel field effect transistor (GAA MBCFET) technology, unraveling …

High electron-mobility transistors (HEMTs) based on III-nitrides are well-known as ideal
choices for high-power, radio-frequency applications. HEMTs, on the other hand, must deal …

FinFET for system-on-chip (SoC) applications like logic/SRAM need shorter fins, whereas in
analog/RF and global interconnect drivers need taller and multi-fins. To tackle this issue, we …