Two-dimensional heterojunction interlayer tunneling field effect transistors (thin-TFETs)
Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free
interfaces, and step-like 2-D density of states. To exploit these features for the design of a …
interfaces, and step-like 2-D density of states. To exploit these features for the design of a …
MBE growth of few-layer 2H-MoTe2 on 3D substrates
MoTe 2 is the least explored material in the Molybdenum-chalcogen family. Molecular beam
epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference …
epitaxy (MBE) provides a unique opportunity to tackle the small electronegativity difference …
Compact modeling of distributed effects in 2-D vertical tunnel FETs and their impact on DC and RF performances
In this paper, distributed effects along the channel are investigated for 2-D vertical tunnel
FETs by developing a model based on a succession of unit cells along the channel, each of …
FETs by developing a model based on a succession of unit cells along the channel, each of …
Predictive Electro and Thermal Quantum Transport in Nanoscale Devices
Y Chu - 2019 - search.proquest.com
Modern semiconductor devices have reached the sub-20 nm regime. Before long, it will be
practically impossible to further scale down the size of Si-based MOSFETs due to short …
practically impossible to further scale down the size of Si-based MOSFETs due to short …
2D Crystal Semiconductors New Materials for GHz-THz Devices
This award allowed us to do the following for the first time 1 Propose alternative devices for
GHz-THz electronics based on 2D Xtals, such as the tunneling THIN-TFET. 2 Tunneling …
GHz-THz electronics based on 2D Xtals, such as the tunneling THIN-TFET. 2 Tunneling …