Optical Enhancement of Indirect Bandgap 2D Transition Metal Dichalcogenides for Multi‐Functional Optoelectronic Sensors
The unique electrical and optical properties of transition metal dichalcogenides (TMDs)
make them attractive nanomaterials for optoelectronic applications, especially optical …
make them attractive nanomaterials for optoelectronic applications, especially optical …
Back-end-of-line compatible large-area molybdenum disulfide grown on flexible substrate: enabling high-performance low-power memristor applications
Transition-metal dichalcogenides (TMDs) in flexible technology can offer large-area
scalability and high-density integration with a low power consumption. However …
scalability and high-density integration with a low power consumption. However …
A wafer‐scale nanoporous 2D active pixel image sensor matrix with high uniformity, high sensitivity, and rapid switching
Abstract 2D transition‐metal dichalcogenides (TMDs) have been successfully developed as
novel ubiquitous optoelectronics owing to their excellent electrical and optical …
novel ubiquitous optoelectronics owing to their excellent electrical and optical …
Vertically integrated spiking cone photoreceptor arrays for color perception
The cone photoreceptors in our eyes selectively transduce the natural light into spiking
representations, which endows the brain with high energy-efficiency color vision. However …
representations, which endows the brain with high energy-efficiency color vision. However …
Low‐Temperature Plasma‐Assisted Growth of Large‐Area MoS2 for Transparent Phototransistors
MoS2‐based transparent electronics can revolutionize the state‐of‐the‐art display
technology. The low‐temperature synthesis of MoS2 below the softening temperature of …
technology. The low‐temperature synthesis of MoS2 below the softening temperature of …
Nitrogen doping effect on InGaZnO-based artificial synapse for implementing reservoir computing and SVHN dataset pattern recognition
This work focused on plasma-induced nitrogen-doped indium gallium zinc oxide (InGaZnO:
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …
N) based resistive switching devices. Nitrogen atoms in the InGaZnO: N can reduce the …
Boosting Sensitivity and Reliability in Field‐Effect Transistor‐Based Biosensors with Nanoporous MoS2 Encapsulated by Non‐Planar Al2O3
Field‐effect transistors‐based biosensors (bio‐FETs) have been considered an important
technology for label‐free and ultrasensitive point‐of‐care diagnostics. However, practical …
technology for label‐free and ultrasensitive point‐of‐care diagnostics. However, practical …
Intelligent block copolymer self-assembly towards IoT hardware components
Abstract The Internet of Things (IoT) has emerged as the principal element for
hyperconnectivity in the era of the fourth industrial revolution, in which low-power and self …
hyperconnectivity in the era of the fourth industrial revolution, in which low-power and self …
Nanoporous MoS2 Field-Effect Transistor Based Artificial Olfaction: Achieving Enhanced Volatile Organic Compound Detection Inspired by the Drosophila Olfactory …
Olfaction, a primal and effective sense, profoundly impacts our emotions and instincts. This
sensory system plays a crucial role in detecting volatile organic compounds (VOCs) and …
sensory system plays a crucial role in detecting volatile organic compounds (VOCs) and …
Large area, ultrathin, and transparent InGaZnO films from printing of liquid Ga–In–Zn alloys for thin film transistors
Amorphous InGaZnO (IGZO) films with high visible transmittance and wide bandgaps are
good candidates to fabricate thin film transistors'(TFTs) switching for flat-panel displays. The …
good candidates to fabricate thin film transistors'(TFTs) switching for flat-panel displays. The …