Recent developments in p‐Type oxide semiconductor materials and devices
Z Wang, PK Nayak, JA Caraveo‐Frescas… - Advanced …, 2016 - Wiley Online Library
The development of transparent p‐type oxide semiconductors with good performance may
be a true enabler for a variety of applications where transparency, power efficiency, and …
be a true enabler for a variety of applications where transparency, power efficiency, and …
Solution-processed inorganic p-channel transistors: Recent advances and perspectives
For decades, inorganic n-type metal-oxide semiconductors have attracted great interest
across a wide range of applications due to their excellent electrical property, low cost, high …
across a wide range of applications due to their excellent electrical property, low cost, high …
Metal oxide semiconductor thin-film transistors for flexible electronics
The field of flexible electronics has rapidly expanded over the last decades, pioneering
novel applications, such as wearable and textile integrated devices, seamless and …
novel applications, such as wearable and textile integrated devices, seamless and …
A review on the recent advancements in tin oxide-based thin-film transistors for large-area electronics
Amorphous oxide semiconductors have gained significant attention in the past few decades
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …
and have emerged as a promising material for thin-film transistors (TFTs) because they offer …
Polyol reduction: a low-temperature eco-friendly solution process for p-channel copper oxide-based transistors and inverter circuits
An optimized polyol reduction method was proposed for p-type Cu x O deposition using a
spin-coating method at low temperatures. The film characterizations and the electrical …
spin-coating method at low temperatures. The film characterizations and the electrical …
High‐performance vacuum‐processed metal oxide thin‐film transistors: a review of recent developments
Since 2010, vacuum‐processed oxide semiconductors have greatly improved with the
publication of more than 1,300 related papers. Although the number of researches on oxide …
publication of more than 1,300 related papers. Although the number of researches on oxide …
Flexible complementary oxide–semiconductor-based circuits employing n-channel ZnO and p-channel SnO thin-film transistors
YS Li, JC He, SM Hsu, CC Lee, DY Su… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, we report flexible fully oxide-based complementary metal-oxide-semiconductor
(CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc …
(CMOS) inverters and ring oscillators by the monolithic integration of flexible n-channel zinc …
Lanthanum doping enabling high drain current modulation in a p-type tin monoxide thin-film transistor
Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin
monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 …
monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 …
[HTML][HTML] Role of structure and composition on the performances of p-type tin oxide thin-film transistors processed at low-temperatures
R Barros, KJ Saji, JC Waerenborgh, P Barquinha… - Nanomaterials, 2019 - mdpi.com
This work reports on the role of structure and composition on the determination of the
performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf …
performances of p-type SnOx TFTs with a bottom gate configuration deposited by rf …
Room temperature-grown highly oriented p-type nanocrystalline tellurium thin-films transistors for large-scale CMOS circuits
Although facile fabrication of high-performance thin-film transistor (TFT)-based
complementary metal oxide–semiconductor (CMOS) circuits over a large area has …
complementary metal oxide–semiconductor (CMOS) circuits over a large area has …