Physics-of-failure, condition monitoring, and prognostics of insulated gate bipolar transistor modules: A review

H Oh, B Han, P McCluskey, C Han… - IEEE Transactions on …, 2014 - ieeexplore.ieee.org
Recent growth of the insulated gate bipolar transistor (IGBT) module market has been driven
largely by the increasing demand for an efficient way to control and distribute power in the …

A comprehensive review toward the state-of-the-art in failure and lifetime predictions of power electronic devices

A Hanif, Y Yu, D DeVoto, F Khan - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
This paper discusses various types of failure mechanisms, precursor parameters, and
accelerated aging-based procedures to estimate the remaining life of power electronic …

Study and handling methods of power IGBT module failures in power electronic converter systems

UM Choi, F Blaabjerg, KB Lee - IEEE Transactions on Power …, 2014 - ieeexplore.ieee.org
Power electronics plays an important role in a wide range of applications in order to achieve
high efficiency and performance. Increasing efforts are being made to improve the reliability …

Thermal management on IGBT power electronic devices and modules

C Qian, AM Gheitaghy, J Fan, H Tang, B Sun… - Ieee …, 2018 - ieeexplore.ieee.org
As an increasing attention towards sustainable development of energy and environment, the
power electronics (PEs) are gaining more and more attraction on various energy systems …

Power cycling test methods for reliability assessment of power device modules in respect to temperature stress

UM Choi, F Blaabjerg… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
Power cycling test is one of the important tasks to investigate the reliability performance of
power device modules in respect to temperature stress. From this, it is able to predict the …

Power cycling reliability of power module: A survey

C Durand, M Klingler, D Coutellier… - IEEE Transactions on …, 2016 - ieeexplore.ieee.org
Electronic devices using semiconductors such as insulated-gate bipolar transistors, metal-
oxide-semiconductor field-effect transistors, and diodes are extensively used in electrical …

Failure mode classification of IGBT modules under power cycling tests based on data-driven machine learning framework

X Yang, Y Zhang, X Wu, G Liu - IEEE Transactions on Power …, 2023 - ieeexplore.ieee.org
Of great significance is knowledge of failure modes of IGBT modules under power cycling
test (PCT) in advance. It can not only precisely determine accurate utilization of physics-of …

Physics-of-failure lifetime prediction models for wire bond interconnects in power electronic modules

L Yang, PA Agyakwa… - IEEE Transactions on …, 2012 - ieeexplore.ieee.org
This paper presents a review of the commonly adopted physics-of-failure-based life
prediction models for wire bond interconnects in power electronic modules. In the discussed …

Ensuring a reliable operation of two-level IGBT-based power converters: A review of monitoring and fault-tolerant approaches

K Hu, Z Liu, Y Yang, F Iannuzzo, F Blaabjerg - IEEE Access, 2020 - ieeexplore.ieee.org
Despite the emerging multi-phase and multi-level converters, two-level insulated gate
bipolar transistor-based power converters are still widely used in industrial applications in …

[PDF][PDF] IGBT 模块寿命评估研究综述

张军, 张犁, 成瑜 - TRANSACTIONS OF CHINA …, 2021 - dgjsxb.ces-transaction.com
摘要绝缘栅双极型晶体管(IGBT) 是电力电子系统实现电能变换与控制的核心组件之一. 然而,
工业界反馈的数据表明, 应用于高可靠性场合的IGBT 模块可靠性并不高, 其热疲劳失效将会导致 …