Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …

Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …

We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …

Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …

We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …

We fabricated high forward and low leakage current trench MOS-type Schottky barrier
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …

Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …

Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …

We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …