Defect engineering in SiC technology for high-voltage power devices
T Kimoto, H Watanabe - Applied Physics Express, 2020 - iopscience.iop.org
Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
state loss, and fast switching, compared with those of the Si counterparts. Through recent …
Material science and device physics in SiC technology for high-voltage power devices
T Kimoto - Japanese Journal of Applied Physics, 2015 - iopscience.iop.org
Power semiconductor devices are key components in power conversion systems. Silicon
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable …
1-kV vertical Ga2O3 field-plated Schottky barrier diodes
K Konishi, K Goto, H Murakami, Y Kumagai… - Applied Physics …, 2017 - pubs.aip.org
Ga 2 O 3 field-plated Schottky barrier diodes (FP-SBDs) were fabricated on a Si-doped n−-
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Ga 2 O 3 drift layer grown by halide vapor phase epitaxy on a Sn-doped n+-Ga 2 O 3 (001) …
Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers …
M Higashiwaki, K Konishi, K Sasaki, K Goto… - Applied Physics …, 2016 - pubs.aip.org
We investigated the temperature-dependent electrical properties of Pt/Ga 2 O 3 Schottky
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
barrier diodes (SBDs) fabricated on n–-Ga 2 O 3 drift layers grown on single-crystal n+-Ga 2 …
Recent progress of GaN power devices for automotive applications
T Kachi - Japanese Journal of Applied Physics, 2014 - iopscience.iop.org
Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …
First Demonstration of Ga2O3 Trench MOS-Type Schottky Barrier Diodes
K Sasaki, D Wakimoto, QT Thieu… - IEEE Electron …, 2017 - ieeexplore.ieee.org
We developed β-Ga 2 O 3 trench MOS-type Schottky barrier diodes (MOSSBDs) for the first
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …
time. A Sidoped Ga 2 O 3 layer was grown via halide vapor phase epitaxy on a single-crystal …
Large-size (1.7× 1.7 mm2) β-Ga2O3 field-plated trench MOS-type Schottky barrier diodes with 1.2 kV breakdown voltage and 109 high on/off current ratio
F Otsuka, H Miyamoto, A Takatsuka… - Applied Physics …, 2021 - iopscience.iop.org
We fabricated high forward and low leakage current trench MOS-type Schottky barrier
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
diodes (MOSSBDs) in combination with a field plate on a 12 μm thick epitaxial layer grown …
Insulated gate and surface passivation structures for GaN-based power transistors
Recent years have witnessed GaN-based devices delivering their promise of
unprecedented power and frequency levels and demonstrating their capability as an able …
unprecedented power and frequency levels and demonstrating their capability as an able …
SiC and GaN devices–wide bandgap is not all the same
N Kaminski, O Hilt - IET Circuits, Devices & Systems, 2014 - Wiley Online Library
Silicon carbide (SiC)‐diodes have been commercially available since 2001 and various SiC‐
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power …
High-Voltage and High- Vertical GaN-on-GaN Schottky Barrier Diode With Nitridation-Based Termination
S Han, S Yang, K Sheng - IEEE Electron Device Letters, 2018 - ieeexplore.ieee.org
We report a high-performance vertical GaN-on-GaN Schottky barrier diode (SBD) with a
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …
planar nitridation-based termination (NT) technique. The developed NT-SBD with nearly …