Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
The junctions formed at the contact between metallic electrodes and semiconductor
materials are crucial components of electronic and optoelectronic devices. Metal …
materials are crucial components of electronic and optoelectronic devices. Metal …
Design and tailoring of two-dimensional Schottky, PN and tunnelling junctions for electronics and optoelectronics
Owing to their superior carrier mobility, strong light–matter interactions, and flexibility at the
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …
atomically thin thickness, two-dimensional (2D) materials are attracting wide interest for …
Low-frequency noise in downscaled silicon transistors: Trends, theory and practice
O Marinov, MJ Deen, JA Jiménez-Tejada - Physics Reports, 2022 - Elsevier
By the continuing downscaling of sub-micron transistors in the range of few to sub-
decananometers, we focus on the increasing relative level of the low-frequency noise in …
decananometers, we focus on the increasing relative level of the low-frequency noise in …
Ultrasensitive and ultraprecise pressure sensors for soft systems
L Shi, Z Li, M Chen, T Zhu, L Wu - Advanced Materials, 2023 - Wiley Online Library
Highly sensitive soft pressure sensors have attracted tremendous attention in recent years
due to their great promise in robotics, healthcare, smart wearables, etc. Although high …
due to their great promise in robotics, healthcare, smart wearables, etc. Although high …
Efficient light generation from enhanced inelastic electron tunnelling
Light emission from biased tunnel junctions has recently gained much attention owing to its
unique potential to create ultracompact optical sources with terahertz modulation …
unique potential to create ultracompact optical sources with terahertz modulation …
Leaky integrate-and-fire neuron circuit based on floating-gate integrator
The artificial spiking neural network (SNN) is promising and has been brought to the notice
of the theoretical neuroscience and neuromorphic engineering research communities. In this …
of the theoretical neuroscience and neuromorphic engineering research communities. In this …
Current conduction mechanisms in atomic-layer-deposited HfO2/nitrided SiO2 stacked gate on 4H silicon carbide
In this paper, current conduction mechanisms of an atomic-layer-deposited HfO 2 gate
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
stacked on different thicknesses of thermally nitrided SiO 2 based on n-type 4H SiC have …
Polarizing and depolarizing charge injection through a thin dielectric layer in a ferroelectric–dielectric bilayer
Charge injection from the near-by-electrode can occur during ferroelectric switching in the
ferroelectric–dielectric bilayer due to the high field applied to the adjacent dielectric layers …
ferroelectric–dielectric bilayer due to the high field applied to the adjacent dielectric layers …
High-speed plasmonic-silicon modulator driven by epsilon-near-zero conductive oxide
Transparent conductive oxides (TCOs) such as indium-tin oxide (ITO) have attracted
increasing interests in integrated photonics and silicon photonics, owing to their large …
increasing interests in integrated photonics and silicon photonics, owing to their large …
Low-energy radiative backgrounds in CCD-based dark-matter detectors
P Du, D Egaña-Ugrinovic, R Essig… - Journal of High Energy …, 2024 - Springer
A bstract The reach of sub-GeV dark-matter detectors is at present severely affected by low-
energy events from various origins. We present the theoretical methods to compute the …
energy events from various origins. We present the theoretical methods to compute the …