Near-junction thermal management: Thermal conduction in gallium nitride composite substrates
The thermal management challenge posed by gallium nitride (GaN) high-electron-mobility
transistor (HEMT) technology has received much attention in the past decade. The peak …
transistor (HEMT) technology has received much attention in the past decade. The peak …
Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages
over traditional Si-based semiconductors in terms of high-power and high-frequency …
over traditional Si-based semiconductors in terms of high-power and high-frequency …
A quasi-physical compact large-signal model for AlGaN/GaN HEMTs
Z Wen, Y Xu, Y Chen, H Tao, C Ren… - IEEE Transactions …, 2017 - ieeexplore.ieee.org
This paper presents an accurate quasi-physical compact large-signal model for GaN high
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …
electron mobility transistors (HEMTs). The drain current I ds expression is acquired by …
The impact of bias conditions on self-heating in AlGaN/GaN HEMTs
The thermal response of AlGaN/GaN high electron mobility transistors directly correlates
with the overall performance and reliability of these devices. In general, a hot spot develops …
with the overall performance and reliability of these devices. In general, a hot spot develops …
Nanostructures significantly enhance thermal transport across solid interfaces
The efficiency of thermal transport across solid interfaces presents large challenges for
modern technologies such as thermal management of electronics. In this paper, we report …
modern technologies such as thermal management of electronics. In this paper, we report …
Electrothermal studies of GaN-based high electron mobility transistors with improved thermal designs
In recent years, tremendous efforts have been dedicated to GaN high electron mobility
transistors (HEMTs) for high-power and high-frequency applications. In general, the …
transistors (HEMTs) for high-power and high-frequency applications. In general, the …
[HTML][HTML] A hybrid simulation technique for electrothermal studies of two-dimensional GaN-on-SiC high electron mobility transistors
In this work, a hybrid simulation technique is introduced for the electrothermal study of a two-
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …
dimensional GaN-on-SiC high electron mobility transistor. Detailed electron and phonon …
Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT
C Bishop, Y Halfaya, A Soltani… - IEEE Sensors …, 2016 - ieeexplore.ieee.org
We report an AlGaN/GaN HEMT gas sensor designed to enable NO, NO 2, and NH 3
detection from 100° C-400° C over a large concentration range. Device modeling is …
detection from 100° C-400° C over a large concentration range. Device modeling is …
Device-level thermal analysis of GaN-based electronics
KR Bagnall - 2013 - dspace.mit.edu
Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor
technologies for high power density and high frequency electronics. The excellent electrical …
technologies for high power density and high frequency electronics. The excellent electrical …
Reproducing GaN HEMT kink effect by simulating field-enhanced barrier defect ionization
M Grupen - IEEE Transactions on Electron Devices, 2019 - ieeexplore.ieee.org
The kink effect, long observed in GaN high electron mobility transistors (HEMTs), is
investigated with the Fermi kinetics transport hot electron simulation method. Fermi kinetics …
investigated with the Fermi kinetics transport hot electron simulation method. Fermi kinetics …