GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

As demonstrated during the COVID-19 pandemic, advanced deep ultraviolet (DUV) light
sources (200–280 nm), such as AlGaN-based light-emitting diodes (LEDs) show excellence …

Status and future outlook of III-V compound semiconductor visible-spectrum light-emitting
diodes (LEDs) are presented. Light extraction techniques are reviewed and extraction …

This work investigates the influence of residual stress on the performance of InGaN-based
red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers …

Wide bandgap nitride semiconductors have recently attracted a great level of attention
owing to their direct bandgaps in the visible to ultraviolet regions of the spectrum as emitters …

Gallium nitride and its alloys with In and Al are used to produce visible and ultraviolet
optoelectronic devices and high power electronic devices. 1, 2 An important physical …

Red-green-blue (RGB) full-color micro light-emitting diodes (μ-LEDs) fabricated from
semipolar (20-21) wafers, with a quantum-dot photoresist color-conversion layer, were …

The" blue laser" is an exciting new device used in physics. The potential is now being
recognized for its development into a commercial lighting system using about a tenth of the …

We calculated the crystal orientation dependence of piezoelectric fields in wurtzite strained
Ga 0.9 In 0.1 N/GaN heterostructures. The highest longitudinal piezoelectric field of 0.7 …

In this letter we describe the structural characteristics of nonpolar (112̄0) a-plane GaN thin
films grown on (11̄02) r-plane sapphire substrates via metalorganic chemical vapor …