The invention relates to a method of providing a structure by depositing a layer on a
substrate in a reactor. The method comprising:

Provided is a cooling device capable of controlling the temperature of an upper portion of a
reactor, or more particularly, a gas supply device, for example, a shower head. The cooling …

In an embodiment, a method for transferring a pattern constituted by vertical spacers
arranged on a template with intervals to the template, includes depositing by plasma …

The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first
precursor comprising a silicon halide in the reactor; introducing a second precursor in the …

Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a
cyclical deposition process are disclosed. The methods may include: providing a substrate …

A method for depositing an oxide film on a substrate by thermal ALD and PEALD, includes:
providing a substrate in a reaction chamber; depositing a first oxide film on the substrate by …

Methods for forming a metallic film on a substrate by cyclical deposition are provided. In
some embodiments methods may include contacting the substrate with a first reactant …

A method of reforming an insulating film deposited on a substrate having a recess pattern
constituted by a bottom and sidewalls, includes: providing the film deposited on the …

Methods for forming a semiconductor device and related semiconductor device structures
are provided. In some embodiments, methods may include forming an NMOS gate dielectric …

A sequential infiltration synthesis apparatus comprising: a reaction chamber constructed and
arranged to hold at least a first substrate; a precursor distribution and removal system to …