This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films
and their quantum wells (QWs), grown by plasma-assisted molecular beam epitaxy. A …

In order to understand the electrical properties of V/Al/Ni/Au metal contacts to Si-doped Al
0.75 Ga 0.25 N layers, X-ray photoelectron spectroscopy analysis was performed on …

We discuss the energetic stability and electronic structure of zirconium adsorption and
incorporation on a 2× 2 reconstructed AlN (0001) surface. We employ density-functional …

GaN and its alloys with AlN and InN, grown heteroepitaxially on sapphire and other
substrates, have a high concentration of point and line defects. In this paper I am addressing …

Atomic force microscopy, wavelength-dispersive x-ray spectroscopy and photoemission
electron microscopy were used to study the contact formation of Au/V/Al/V-based contacts on …

We have performed spin‐polarized first‐principles calculations to explore the vanadium
adsorption and diffusion on the AlN (0001)‐(2× 2) surface. The calculations were performed …

Ab‐initio density functional theory calculations are carried out to investigate the role of
zirconium (Zr) impurity atoms during AlN (0001) surface growth. Adsorption and diffusion of …