Physics at Surfaces is a unique graduate-level introduction to the physics and chemical
physics of solid surfaces, and atoms and molecules that interact with solid surfaces. A …

Organometallic Vapor-Phase Epitaxy describes the operation of a particular technique for
the production of compound semiconductor materials. It describes how the technique works …

A study was undertaken to assess the efficiency of precursors' usage during deposition of
cadmium telluride (CdTe) layers via atmospheric pressure metal organic chemical vapour …

The growth of tungsten ditelluride (WTe 2) thin films on c-plane sapphire substrates was
demonstrated by metalorganic chemical vapor deposition (MOCVD) using tungsten …

The electrical properties of arsenic doped CdTe epitaxial layers grown on GaAs (100)
substrates by metalorganic chemical vapor deposition with dimethylcadmium and …

This work reports for the first time the preparation of ordered Cd (1− x) ZnxTe epilayers. The
epilayers were deposited on CdTe (100) substrates by metal organic chemical vapor …

In this paper, we report on the atomic layer epitaxy (ALE) of CdTe on GaAs and Si by the
organometallic vapor phase epitaxial process at atmospheric pressure. Self-limiting growth …

The electrodeposition of thin films of CdTe on n-Si {111} has been carried out using the
method of continuous cycling of the potential from the open circuit value to that just positive …

We report on the growth of CdTe layers directly onto (0001) sapphire substrates by MOCVD.
The structure and morphology of the layers have been investigated as a function of growth …

It is proposed that the limiting temperature, θ, for single crystal growth from the gas phase is
the temperature at which the kinetic rate of arrival at each surface site is equal to the rate of …