Embodiments of the present invention generally relate to a method and apparatus for
plasma etching substrates and, more specifically, to a method and apparatus with protection …

Related US Application Data (60) Provisional application No. 61/222,727, filed on Jul. 2,
2009, provisional application No. 61/213,904, filed on Jul. 24, 2009, provisional application …

An article is described including an article Surface and a coating set comprising a tie coating
or layer of SiO. C., or Si (NH), C, applied to the article surface, a barrier coating or layer of …

5,423.915 5,429,070 5.433, 786 5.434, 008 5.439, 736 5,440,446 5,443,645 5,444,207
5.449, 432 5,452,082 5,468,520 5,470,388 5,472,660 5,485,091 5,486,701 5,494,170 …

A package including a vessel made of cyclic olefin polymer (COP) resin, a CVD coating on a
vessel, and a medicament comprising at least one protein, peptide, and/or DNA sequence is …

Apparatuses are provided for controlling flow conductance of plasma formed in a plasma
processing apparatus that includes an upper electrode opposite a lower electrode to form a …

A method for processing a workpiece in a plasma reactor. The method comprises
constraining plasma in the chamber away from the floor of the pumping annulus, providing …

A plasma processing chamber has a lower liner with an integrated flow equalizer. In an
etching process, the processing gases may be unevenly drawn from the processing …

(57) ABSTRACT A faceplate for a gas distribution system of a plasma processing chamber
includes a faceplate body having a first surface, a second surface opposite to the first …

(57) ABSTRACT A plasma processing chamber having a lowered flow equal izer and a
lower chamber liner. In an etching process, the processing gases may be unevenly drawn …