Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Journal of applied physics, 2010 - pubs.aip.org
Methods to extract trap densities at high-permittivity (k) dielectric/III-V semiconductor
interfaces and their distribution in the semiconductor band gap are compared. The …
interfaces and their distribution in the semiconductor band gap are compared. The …
The Characterization and Passivation of Fixed Oxide Charges and Interface States in the MOS System
In this paper, we present a review of experimental results examining charged defect
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
components in the Al 2 O 3/In 0.53 Ga 0.47 As metal-oxide-semiconductor (MOS) system …
Enhancement-mode hydrogenated diamond metal-oxide-semiconductor field-effect transistors with Y2O3 oxide insulator grown by electron beam evaporator
Enhancement-mode (E-mode) hydrogenated diamond (H-diamond) metal-oxide-
semiconductor field-effect transistors (MOSFETs) are fabricated with an Y 2 O 3 oxide …
semiconductor field-effect transistors (MOSFETs) are fabricated with an Y 2 O 3 oxide …
Comparative Study of Atomic-Layer-Deposited Stacked (HfO2/Al2O3) and Nanolaminated (HfAlOx) Dielectrics on In0.53Ga0.47As
The high-k gate dielectric structures in stacked (HfO2/Al2O3) and nanolaminated (HfAlO x)
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
forms with a similar apparent accumulation capacitance were atomic-layer-deposited on n …
Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric
HfO 2 films have been deposited on hydrogen-terminated diamond (H-diamond) by an
atomic layer deposition (ALD) technique at 120 C. Effect of rapid thermal annealing …
atomic layer deposition (ALD) technique at 120 C. Effect of rapid thermal annealing …
An investigation of capacitance-voltage hysteresis in metal/high-k/In0. 53Ga0. 47As metal-oxide-semiconductor capacitors
In this work, we present the results of an investigation into charge trapping in metal/high-k/In
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
0.53 Ga 0.47 As metal-oxide-semiconductor capacitors (MOS capacitors), which is analysed …
Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals
HP Komsa, A Pasquarello - Journal of Physics: Condensed …, 2012 - iopscience.iop.org
The formation energies and charge transition levels of vacancy and antisite defects in GaAs
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
and In 0.5 Ga 0.5 As are calculated through hybrid density functionals. In As-rich conditions …
Realization of high-quality HfO2 on In0. 53Ga0. 47As by in-situ atomic-layer-deposition
High κ dielectric of HfAlO/HfO 2 was an in-situ atomic-layer-deposited directly on molecular
beam epitaxy grown In 0.53 Ga 0.47 As surface without using pre-treatments or interfacial …
beam epitaxy grown In 0.53 Ga 0.47 As surface without using pre-treatments or interfacial …
Quantification of trap densities at dielectric/III–V semiconductor interfaces
R Engel-Herbert, Y Hwang, S Stemmer - Applied Physics Letters, 2010 - pubs.aip.org
High-frequency capacitance-voltage curves for capacitors with high-k gate dielectrics and III–
V semiconductor channels are modeled. The model takes into account the low conduction …
V semiconductor channels are modeled. The model takes into account the low conduction …
The physical origin of dispersion in accumulation in InGaAs based metal oxide semiconductor gate stacks
Dispersion in accumulation is a widely observed phenomenon in technologically important
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …
InGaAs gate stacks. Two principal different interface defects were proposed as the physical …