The large variety of 2D materials and their co-integration in van der Waals heterostructures
enable innovative device engineering. In addition, their atomically thin nature promotes the …

Abstract 2D materials are attractive for nanoelectronics due to their ultimate thickness
dimension and unique physical properties. A wide variety of emerging spintronic device …

The scaling of complementary metal–oxide–semiconductor (CMOS) technology is
increasingly challenging, but demand for low-power data storage and processing continues …

After the first unequivocal demonstration of spin transport in graphene [Tombros et al.,
Nature (London) 448, 571–574 (2007)], surprisingly at room temperature, it was quickly …

The isolation of graphene has triggered an avalanche of studies into the spin-dependent
physical properties of this material and of graphene-based spintronic devices. Here, we …

The extremely high carrier mobility and the unique band structure, make graphene very
useful for field-effect transistor applications. According to several works, the primary …

Spintronics holds the promise for future information technologies. Devices based on
manipulation of spin are most likely to replace the current silicon complementary metal …

As an approximation to the quantum state of solids, the band theory, developed nearly
seven decades ago, fostered the advance of modern integrated solid‐state electronics, one …

Graphene is an ideal medium for long-distance spin communication in future spintronic
technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene …

Despite over a decade of intense research efforts, the full potential of two-dimensional
transition-metal dichalcogenides continues to be limited by major challenges. The lack of …