We report the performance of field-effect transistors (FETs), composed of monolayer of
recently synthesized layered two-dimensional (2-D) MoSi 2 N 4 as channel material, using …

In the quest for ultra-low-power electronics and integrating more and more functionality in an
integrated circuit (IC), the semiconductor industry has entered the sub-3 nm node. A fin field …

Low-dimensional semiconductors, particularly 2-D semiconductors, with anisotropic
electronic properties have the potential for realizing ultrascaled field-effect transistors …

Transistors, composed of natural atomically thin 2-D semiconductors, have shown great
potential for electronics beyond silicon-based complementary metal-oxide-semiconductor …

Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …

Field-effect transistors may be able to overcome the so-called “Boltzmann tyranny” of power
dissipation with the incorporation of ferroelectric negative capacitance (NC) into their design …

Lowering power consumption has emerged as the primary goal as silicon circuits become
more compact. Furthermore, the ultra-highly integrated circuit will unavoidably generate a …

We report the performance of field-effect transistors (FETs), comprised of mono-layer of
recently synthesized layered two-dimensional MoSi2N_4 as channel material, using the first …

Molybdenum disulfide (MoS2) has distinctive electronic and mechanical properties which
make it a highly prospective material for use as a channel in upcoming nanoelectronic …