Metal oxide resistive switching memories have been a crucial component for the
requirements of the Internet of Things, which demands ultra‐low power and high‐density …

Semiconductor memories are essential ingredients of modern electronic devices. Resistive
Random-Access Memories (RRAMs) have emerged as better alternatives for conventional …

Due to the fast evolution of information technology, high-speed and scalable memory
devices are being investigated for data storage and data-driven computation. Resistive …

A titanium dioxide (TiO 2) based memristor device having an active layer thickness of 10 nm
was fabricated using radio frequency (RF) reactive sputtering and its resistive switching …

Titanium oxide thin films were deposited by rf magnetron sputtering of Ti metallic target in
flow-controlled O 2+ Ar atmosphere. Comprehensive investigations of crystallographic …

In this work, we present the influence of annealing atmospheres during rapid thermal
annealing (40° C/s) on nanostructured Ti platforms modified by 10 nm layer of AuCu alloy …

Photoactive europium doped titanium dioxide (Eu: TiO2) thin films were grown by a matrix
assisted pulsed laser evaporation technique. TiO2 and Eu cation-adsorbed TiO2 …

Transition metal dichalcogenides, such as molybdenum disulfide (MoS2), show peculiar
chemical/physical properties that enable their use in applications ranging from micro-and …

Electronic devices that emulate biofunctionalities, such as synaptic plasticity, present a
promising route to versatile and energy-efficient neuromorphic computing systems. As the …

The pure and Sn-doped SeO2 thin films on borosilicate glass substrates were synthesized
using a spray pyrolysis method. X-ray diffraction analysis revealed that higher and …