Non-stoichiometric semiconductor materials for terahertz optoelectronics applications
A Krotkus, JL Coutaz - Semiconductor science and technology, 2005 - iopscience.iop.org
Non-stoichiometric semiconductor materials for terahertz optoelectronics applications Page 1
Semiconductor Science and Technology Non-stoichiometric semiconductor materials for …
Semiconductor Science and Technology Non-stoichiometric semiconductor materials for …
Thermal annealing characteristics of Si and Mg‐implanted GaN thin films
JS Chan, NW Cheung, L Schloss, E Jones… - Applied physics …, 1996 - pubs.aip.org
In this letter, we report the results of ion implantation of GaN using 28Si and 24Mg species.
Structural and electrical characterizations of the GaN thin films after thermal annealing show …
Structural and electrical characterizations of the GaN thin films after thermal annealing show …
Properties of Ga-interstitial defects in
A detailed account of the experimental results from optically detected magnetic resonance
(ODMR) studies of grown-in defects in (Al) GaNP alloys, prepared by molecular beam …
(ODMR) studies of grown-in defects in (Al) GaNP alloys, prepared by molecular beam …
Controlled group V intermixing in InGaAsP quantum well structures and its application to the fabrication of two section tunable lasers
We report the technique of controlled group V quantum well intermixing (QWI) in a
compressively strained In 0.76 Ga 0.24 As 0.85 P 0.15/In 0.76 Ga 0.24 As 0.52 P 0.48 …
compressively strained In 0.76 Ga 0.24 As 0.85 P 0.15/In 0.76 Ga 0.24 As 0.52 P 0.48 …
Formation of titanium-solute clusters in alumina: A first-principles study
K Matsunaga, T Mizoguchi, A Nakamura… - Applied physics …, 2004 - pubs.aip.org
Electronic structures and stability of substitutional Ti 3+ clusters in Al 2 O 3 were investigated
by first-principles pseudopotential calculations using large supercells. It was found that a …
by first-principles pseudopotential calculations using large supercells. It was found that a …
Enhanced band-gap blueshift due to group V intermixing in InGaAsP multiple quantum well laser structures induced by low temperature grown InP
ASW Lee, M MacKenzie, DA Thompson… - Applied Physics …, 2001 - pubs.aip.org
Photoluminescence and cross-sectional transmission electron microscopy, combined with x-
ray compositional analysis, have been used to study quantum well intermixing in an …
ray compositional analysis, have been used to study quantum well intermixing in an …
Ultrafast trapping times in ion implanted InP
As+ and P+ implantation was performed on semi-insulating (SI) and p-type InP samples for
the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP …
the purpose of creating a material suitable for ultrafast optoelectronic applications. SI InP …
Ultrafast carrier trapping and recombination in highly resistive ion implanted InP
C Carmody, HH Tan, C Jagadish, A Gaarder… - Journal of applied …, 2003 - pubs.aip.org
Semiconductor materials with high resistivity, good electron mobility, large breakdown fields,
and fast optical response are essential for a variety of applications, including ultrafast …
and fast optical response are essential for a variety of applications, including ultrafast …
Intrinsic Doping: A New Approach for n-Type Modulation Doping in InP-Based Heterostructures
WM Chen, IA Buyanova, AV Buyanov, T Lundström… - Physical review …, 1996 - APS
A new approach for n-type modulation doping in InP-based heterostructures is proposed
where intrinsic defects are utilized to provide charge carriers without an external shallow …
where intrinsic defects are utilized to provide charge carriers without an external shallow …
Vibrational modes of carbon acceptors and hydrogen-carbon pairs in semi-insulating InP doped using
BR Davidson, RC Newman, CC Button - Physical Review B, 1998 - APS
Infrared absorption measurements show that high-resistivity InP grown by metal-organic
vapor phase epitaxy (MOVPE) at 500 C and doped using CCl 4 contains comparably high …
vapor phase epitaxy (MOVPE) at 500 C and doped using CCl 4 contains comparably high …